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arXiv · 1710.08071

High-order harmonic generation of doped semiconductor

Tengfei Huang·Xiaosong Zhu·Liang Li·Xi Liu·Pengfei Lan·Peixiang Lu
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Abstract

We investigate the high-order harmonic generation (HHG) in doped semiconductors. The HHG is simulated with the single-electron time-dependent Schrödinger equation (TDSE). The results show that the high-order harmonics in the second plateau generated from the doped semiconductors is about 1 to 3 orders of magnitude higher than those from the undoped semiconductor. The results are explained based on the analysis of the energy band structure and the time-dependent population imaging. Our work indicates that doping can effectively control the HHG in semiconductor.

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Tengfei Huang, Xiaosong Zhu, Liang Li, Xi Liu, Pengfei Lan, Peixiang Lu. 2017-10-23. High-order harmonic generation of doped semiconductor. https://doi.org/10.1103/physreva.96.043425

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