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arXiv · 1710.09416

Assembling Di- and Multiatomic Si Clusters in Graphene via Electron Beam Manipulation

Ondrej Dyck·Songkil Kim·Elisa Jimenez-Izal·Anastassia N. Alexandrova·Sergei V. Kalinin·Stephen Jesse
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Abstract

We demonstrate assembly of di-, tri- and tetrameric Si clusters on the graphene surface using sub-atomically focused electron beam of a scanning transmission electron microscope. Here, an electron beam is used to introduce Si substitutional defects and defect clusters in graphene with spatial control of a few nanometers, and enable controlled motion of Si atoms. The Si substitutional defects are then further manipulated to form dimers, trimers and more complex structures. The dynamics of a beam induced atomic scale chemical process is captured in a time-series of images at atomic resolution. These studies suggest that control of the e-beam induced local processes offers the next step toward atom-by-atom nanofabrication and provides an enabling tool for study of atomic scale chemistry in 2D materials.

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Ondrej Dyck, Songkil Kim, Elisa Jimenez-Izal, Anastassia N. Alexandrova, Sergei V. Kalinin, Stephen Jesse. 2018-05-22. Assembling Di- and Multiatomic Si Clusters in Graphene via Electron Beam Manipulation. https://doi.org/10.1002/smll.201801771

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