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arXiv · 1710.11375

Proximity-induced superconductivity within the InAs/GaSb edge conducting state

A. Kononov·V. A. Kostarev·B. R. Semyagin·V. V. Preobrazhenskii·M. A. Putyato·E. A. Emelyanov·E. V. Deviatov
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Abstract

We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InAs quantum wells. For the trivial case of a direct band insulator in 10~nm samples, differential resistance demonstrates standard Andreev reflection. For InAs/GaSb structures with band inversion (12~nm and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14~nm InAs well samples, we additionally observe mesoscopic-like resistance fluctuations, which are subjected to threshold suppression in low magnetic fields.

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A. Kononov, V. A. Kostarev, B. R. Semyagin, V. V. Preobrazhenskii, M. A. Putyato, E. A. Emelyanov, E. V. Deviatov. 2017-12-18. Proximity-induced superconductivity within the InAs/GaSb edge conducting state. https://doi.org/10.1103/physrevb.96.245304

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