arXiv subjects

V. A. Kostarev

Publications and source records attributed to V. A. Kostarev.

3 recordsLinked to original sources

arXiv2017

Proximity-induced superconductivity within the InAs/GaSb edge conducting state

We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InAs quantum wells. For the trivial case of a direct band insulator in 10~nm samples, differential resistance demonstrates standard Andreev reflection. For InAs/GaSb structures with band inversion (12~nm and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14~nm InAs well samples, we additionally observe mesoscopic-like resistance fluctuations, which are subjected to threshold suppression in low magnetic fields.

cond-mat.mes-hall↗

arXiv2017

Conductance oscillations and zero-bias anomaly in a single superconducting junction to a three-dimensional $Bi_2Te_3$ topological insulator

We experimentally investigate Andreev transport through a single junction between an s-wave indium superconductor and a thick film of a three-dimensional $Bi_2Te_3$ topological insulator. We study $Bi_2Te_3$ samples with different bulk and surface characteristics, where the presence of a topological surface state is confirmed by direct ARPES measurements. All the junctions demonstrate Andreev transport within the superconducting gap. For junctions with transparent $In-Bi_2Te_3$ interfaces we find a number of nearly periodic conductance oscillations, which are accompanied by zero-bias conductance anomaly. Both effects disappear above the superconducting transition or for resistive junctions. We propose a consistent interpretation of both effects as originating from proximity-induced superconducting correlations within the $Bi_2Te_3$ topological surface state.

cond-mat.mes-hall↗

arXiv2016

Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion

We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro- (at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.

cond-mat.mes-hall↗