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arXiv · 1712.01865

Effect of Low-Frequency Signal On Nanoscale Memristor Device

T. D. Dongale·S. R. Ghatage
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Abstract

In the present report, we have investigated the effect of the low-frequency signal on nanoscale memristor device. The frequency is varied from 2 Hz to 10 Hz and the corresponding effect on the current-voltage characteristics, time domain state variable, charge-magnetic flux relation, memristance-charge relation, memristance-voltage characteristics and memristance-magnetic flux relation are studied. The results clearly suggested that the frequency of the input stimulus plays an important role in the device dynamics.

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T. D. Dongale, S. R. Ghatage. 2017-10-13. Effect of Low-Frequency Signal On Nanoscale Memristor Device. https://arxiv.org/abs/1712.01865

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