S. R. Ghatage | Searcharxiv

arXiv2017

Effect of Low-Frequency Signal On Nanoscale Memristor Device

In the present report, we have investigated the effect of the low-frequency signal on nanoscale memristor device. The frequency is varied from 2 Hz to 10 Hz and the corresponding effect on the current-voltage characteristics, time domain state variable, charge-magnetic flux relation, memristance-charge relation, memristance-voltage characteristics and memristance-magnetic flux relation are studied. The results clearly suggested that the frequency of the input stimulus plays an important role in the device dynamics.

physics.app-ph↗

arXiv2017

Time and Frequency Domain Investigation of Selected Memristor based Analog Circuits

In this paper, we investigate few memristor-based analog circuits namely the phase shift oscillator, integrator, and differentiator which have been explored numerously using the traditional lumped components. We use LTspice-IV platform for simulation of the above-said circuits. The investigation resorts to the nonlinear dopant drift model of memristor and the window function portrayed in the literature for nonlinearity realization. The results of our investigations depict good agreement with the conventional lumped component based phase shift oscillator, integrator, and differentiator circuits. The results are evident to showcase the potential of the memristor as a promising candidate for the next generation analog circuits.

cs.ET↗