Ab-initio Modeling of CBRAM Cells: from Ballistic Transport Properties to Electro-Thermal Effects

Fabian Ducry; Alexandros Emboras; Samuel Andermatt; Mohammad Hossein Bani-Hashemian; Bojun Cheng; Juerg Leuthold; Mathieu Luisier

arXiv · 1712.06681

Ab-initio Modeling of CBRAM Cells: from Ballistic Transport Properties to Electro-Thermal Effects

Fabian Ducry·Alexandros Emboras·Samuel Andermatt·Mohammad Hossein Bani-Hashemian·Bojun Cheng·Juerg Leuthold·Mathieu Luisier

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Abstract

We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an atomic-scale filament connecting two metallic contacts have been constructed. Their transport properties have been studied in the ballistic limit and in the presence of electron-phonon scattering, showing good agreement with experimental data. It has been found that the relocation of few atoms is sufficient to change the resistance of the CBRAM by 6 orders of magnitude, that the electron trajectories strongly depend on the filament morphology, and that self-heating does not affect the device performance at currents below 1 $μ$A.

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Fabian Ducry, Alexandros Emboras, Samuel Andermatt, Mohammad Hossein Bani-Hashemian, Bojun Cheng, Juerg Leuthold, Mathieu Luisier. 2017-11-29. Ab-initio Modeling of CBRAM Cells: from Ballistic Transport Properties to Electro-Thermal Effects. https://arxiv.org/abs/1712.06681

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