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arXiv · 1712.07618

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wei-Hsiang Wang·Elica Heredia·Syue-Ru Lyu·Shu-Hao Liu·Po-Yung Liao·Ting-Chang Chang·Pei-hsun Jiang
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Abstract

We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double- gate amorphous InGaZnO thin-film transistors. Our study unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

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Wei-Hsiang Wang, Elica Heredia, Syue-Ru Lyu, Shu-Hao Liu, Po-Yung Liao, Ting-Chang Chang, Pei-hsun Jiang. 2017-12-20. Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors. https://doi.org/10.1109/led.2017.2786547

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