arXiv subjects

Elica Heredia

Publications and source records attributed to Elica Heredia.

4 recordsLinked to original sources

arXiv2024

1/f frequency fluctuations due to kinetic inductance in CoSi$_2$ microwave cavities

Cobalt disilicide provides a promising nearly-epitaxial superconducting material on silicon, which is compatible with high-density integrated circuit technology. We have characterized CoSi$_{2}$ superconducting microwave cavities around 5.5 GHz for resonance frequency fluctuations at temperatures 10 - 200 mK. We found relatively weak fluctuations $(δf/f)^2$ following the spectral density $A/f^γ $, with $A \simeq 6 \times 10^{-16}$ and $γ$ slightly below 1 at an average number of photons of $10^4$; the noise decreased with measurement power as $1/P^{1/2}$. We identify the noise as arising from kinetic inductance fluctuations and discuss possible origins of such fluctuations.

cond-mat.supr-con↗

arXiv2017

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double- gate amorphous InGaZnO thin-film transistors. Our study unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

cond-mat.mes-hall↗

arXiv2017

Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO$_4$ thin-film transistors

We investigate the gate-voltage dependence of the magnetoconductivity of several amorphous InGaZnO$_4$ (a-IGZO) thin-film transistors (TFTs). The magnetoconductivity exhibits gate-voltage- controlled competitions between weak localization (WL) and weak antilocalization (WAL), and the respective weights of WL and WAL contributions demonstrate an intriguing universal dependence on the channel conductivity regardless of the difference in the electrical characteristics of the a-IGZO TFTs. Our findings help build a theoretical interpretation of the competing WL and WAL observed in the electron systems in a-IGZO TFTs.

cond-mat.mes-hall↗

arXiv2017

Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

cond-mat.mes-hall↗