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arXiv · 1801.05157

Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T$^{\prime}$-MoS$_{2}$

Nikos Papadopoulos·Gary A. Steele·Herre S. J. van der Zant
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Abstract

We have studied temperature- and electric-field dependent carrier transport in single flakes of MoS$_{2}$ treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, comparison between two- and four-probe measurements yield a contact resistance that increases significantly with decreasing temperature.

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Nikos Papadopoulos, Gary A. Steele, Herre S. J. van der Zant. 2018-01-16. Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T$^{\prime}$-MoS$_{2}$. https://doi.org/10.1103/physrevb.96.235436

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