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arXiv · 1801.09329

Chemically stabilized epitaxial wurtzite-BN thin film

Badri Vishal·Rajendra Singh·Abhishek Chaturvedi·Ankit Sharma·M. B. Sreedhara·Rajib Sahu·Usha Bhat·Upadrasta Ramamurty·Ranjan Datta
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Abstract

We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.

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Badri Vishal, Rajendra Singh, Abhishek Chaturvedi, Ankit Sharma, M. B. Sreedhara, Rajib Sahu, Usha Bhat, Upadrasta Ramamurty, Ranjan Datta. 2018-01-22. Chemically stabilized epitaxial wurtzite-BN thin film. https://doi.org/10.1016/j.spmi.2018.01.027

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