arXiv subjects

Rajib Sahu

Publications and source records attributed to Rajib Sahu.

5 recordsLinked to original sources

arXiv2026

Diamond-to-graphite transformation under hypersonic impact

Diamond to graphite transformation is a complex kinetically driven process which has been studied under various conditions for its fundamental importance. We report the transformation of diamond embedded ceramic matrix composites during hypersonic impact. Diamond particles embedded in cubic boron nitride matrix provide a superhard composite that was subjected to high impact collisions of metal projectiles travelling at speeds reaching Mach 8.45. Our observations suggest that the energy absorption and fracture of the composite is primarily enabled via the phase change of diamond into graphite. Characterization of the impact-fractured composite shows transformed diamond particles and provides details of the shock-induced phase transformation and the nature of diamond-graphite interfaces formed during rapid phase change. The study provides new understanding of phase transformation of diamond under extreme conditions.

cond-mat.mtrl-sci↗

arXiv2024

Operando Insights on the Degradation Mechanisms of Rhenium-doped and Undoped Molybdenum Disulfide Nanocatalysts for Electrolyzer Applications

MoS2 nanostructures are promising catalysts for proton-exchange-membrane (PEM) electrolyzers to replace expensive noble metals. Their broadscale application demands high activity for the hydrogen evolution reaction (HER) as well as robust durability. Doping is commonly applied to enhance the HER activity of MoS2-based nanocatalysts, but the effect of dopants in the electrochemical and structural stability is yet to be discussed. Herein, we correlate operando electrochemical measurements to the structural evolution of the materials down to the nanometric scale by identical location electron microscopy and spectroscopy. The range of stable operation for MoS2 nanocatalysts with and without rhenium doping is experimentally defined. The responsible degradation mechanisms at first electrolyte contact, open circuit stabilization and HER conditions are experimentally identified and confirmed with the calculated Pourbaix diagram of Re-doped MoS2. Doping MoS2-based nanocatalysts is validated as a promising strategy for the continuous improvement of high performance and durable PEM electrolyzers.

physics.app-ph↗

arXiv2021

Direct imaging of dopant and impurity distributions in 2D MoS$_2$

Molybdenum disulfide (MoS$_2$) nanosheet is a two-dimensional material with high electron mobility and with high potential for applications in catalysis and electronics. We synthesized MoS$_2$ nanosheets using a one-pot wet-chemical synthesis route with and without Re-doping. Atom probe tomography revealed that 3.8 at.% Re is homogeneously distributed within the Re-doped sheets. Other impurities are found also integrated within the material: light elements including C, N, O, and Na, locally enriched up to 0.1 at.%, as well as heavy elements such as V and W. Analysis of the non-doped sample reveals that the W and V likely originate from the Mo precursor.

cond-mat.mtrl-sci↗

arXiv2018

Chemically stabilized epitaxial wurtzite-BN thin film

We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.

cond-mat.mtrl-sci↗

arXiv2016

Substrate induced tuning of compressive strain and phonon modes in large area MoS2 and WS2 van der Waals epitaxial thin films

Large area MoS2 and WS2 van der Waals epitaxial thin films with complete control over number of layers including monolayer is grown by pulsed laser deposition utilizing slower growth kinetics. The films grown on c-plane sapphire show stiffening of A1g and E12g phonon modes with decreasing number of layers for both MoS2 and WS2. The observed stiffening translate into the compressive strain of 0.52 % & 0.53 % with accompanying increase in fundamental direct band gap to 1.74 and 1.68 eV for monolayer MoS2 and WS2, respectively. The strain decays with the number of layers. HRTEM imaging directly reveals the nature of atomic registry of van der Waals layers with the substrate and the associated compressive strain. The results demonstrate a practical route to stabilize and engineer strain for this class of material over large area device fabrication.

cond-mat.mtrl-sci↗