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arXiv · 1801.09451

Band alignments of electronic energy structure in epitaxially grown \b{eta}-Ga2O3 layers

D. A. Zatsepin·D. W. Boukhvalov·A. F. Zatsepin·Yu. A. Kuznetsova·D. Gogova·V. Ya. Shur·A. A. Esin
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Abstract

Gallium oxide epitaxial layers grown on native substrates and basal plane sapphire were characherized by X-ray phtotelectron and optical reflectance spectroscopies. The XPS electronic structure mapping was coupled to Density functional theory calculations.

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D. A. Zatsepin, D. W. Boukhvalov, A. F. Zatsepin, Yu. A. Kuznetsova, D. Gogova, V. Ya. Shur, A. A. Esin. 2018-01-29. Band alignments of electronic energy structure in epitaxially grown \b{eta}-Ga2O3 layers. https://arxiv.org/abs/1801.09451

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