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arXiv · 1802.00071

Conditions for Parametric and Free-Carrier Oscillation in Silicon Ring Cavities

Ryan Hamerly·Dodd Gray·Christopher Rogers·Kambiz Jamshidi
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Abstract

We model optical parametric oscillation in ring cavities with two-photon absorption, focusing on silicon at 1.55$\mu$m. Oscillation is possible if free-carrier absorption can be mitigated; this can be achieved using carrier sweep-out in a reverse-biased p-i-n junction to reduce the carrier lifetime. By varying the pump power, detuning, and reverse-bias voltage, it is possible to generate frequency combs in cavities with both normal and anomalous dispersion at a wide range of wavelengths including 1.55$\mu$m. Furthermore, a free-carrier self-pulsing instability leads to rich dynamics when the carrier lifetime is sufficiently long.

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Ryan Hamerly, Dodd Gray, Christopher Rogers, Kambiz Jamshidi. 2018-01-31. Conditions for Parametric and Free-Carrier Oscillation in Silicon Ring Cavities. https://doi.org/10.1109/jlt.2018.2833054

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