Coefficient of Thermal Expansion Mismatch Induced Stress Calculation for Field Assisted Bonding of Silicon to Glass

Leonid S. Sinev; Vladimir T. Ryabov

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arXiv · 1802.01490

Coefficient of Thermal Expansion Mismatch Induced Stress Calculation for Field Assisted Bonding of Silicon to Glass

Leonid S. Sinev·Vladimir T. Ryabov

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Abstract

The residual stress induced in assembly is a common concern in electronic packaging. The mismatch in coefficient of thermal expansion between borosilicate glass and silicon, upon temperature variation, generates an internal stress state. This affects important characteristics of microelectromechanical devices or constituent elements. Such as self frequence or stiffness. Stresses caused by thermal expansion coefficients mismatch of anodically bonded glass and silicon samples are studied in this paper. Stress calculation based on lamination theory is presented. Usage examples of such calculations are described. For bonded silicon and LK-5 glass several results of calculations are presented. Stress distribution in bonded silicon and glass of several thicknesses is evaluated. Stress distribution in bonded glass-silicon-glass structure is evaluated. Bonded silicon surface stress dependence of glass to silicon wafer thickness ratio is evaluated. Experimental study of thermal mismatch stress in glass based on birefringence phenomenon was conducted. It's results are presented in this paper. Keywords: anodic bonding, field assisted bonding, thermal expansion, stress.

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Leonid S. Sinev, Vladimir T. Ryabov. 2017-12-05. Coefficient of Thermal Expansion Mismatch Induced Stress Calculation for Field Assisted Bonding of Silicon to Glass. https://arxiv.org/abs/1802.01490

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