Selective Area Grown Semiconductor-Superconductor Hybrids: A Basis for Topological Networks

S. Vaitiekėnas; A. M. Whiticar; M. T. Deng; F. Krizek; J. E. Sestoft; C. J. Palmstrøm; S. Marti-Sanchez; J. Arbiol; P. Krogstrup; L. Casparis; C. M. Marcus

doi:10.1103/physrevlett.121.147701

arXiv · 1802.04210

Selective Area Grown Semiconductor-Superconductor Hybrids: A Basis for Topological Networks

S. Vaitiekėnas·A. M. Whiticar·M. T. Deng·F. Krizek·J. E. Sestoft·C. J. Palmstrøm·S. Marti-Sanchez·J. Arbiol·P. Krogstrup·L. Casparis·C. M. Marcus

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Abstract

We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features in agreement with theory. Coulomb peak spacing in parallel magnetic field displays overshoot, indicating an oscillating discrete near-zero subgap state consistent with device length. Finally, we investigate a loop network, finding strong spin-orbit coupling and a coherence length of several microns. These results demonstrate the potential of this platform for scalable topological networks among other applications.

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S. Vaitiekėnas, A. M. Whiticar, M. T. Deng, F. Krizek, J. E. Sestoft, C. J. Palmstrøm, S. Marti-Sanchez, J. Arbiol, P. Krogstrup, L. Casparis, C. M. Marcus. 2018-09-11. Selective Area Grown Semiconductor-Superconductor Hybrids: A Basis for Topological Networks. https://doi.org/10.1103/physrevlett.121.147701

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