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arXiv · 1802.06005

Localized interlayer complexes in heterobilayer transition metal dichalcogenides

Mark Danovich·David A. Ruiz-Tijerina·Ryan J. Hunt·Marcin Szyniszewski·Neil D. Drummond·Vladimir I. Fal'ko
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Abstract

We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe$_2$/WSe$_2$ twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in few $μ$s$^{-1}$ radiative rates. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite radiative rate with a strong asymptotic twist angle dependence $\propto θ^{-8}$. Finally, phonon-assisted recombination is considered, with emission of optical phonons in both layers resulting in additional weaker emission lines, redshifted by the phonon energy.

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Mark Danovich, David A. Ruiz-Tijerina, Ryan J. Hunt, Marcin Szyniszewski, Neil D. Drummond, Vladimir I. Fal'ko. 2018-06-01. Localized interlayer complexes in heterobilayer transition metal dichalcogenides. https://doi.org/10.1103/physrevb.97.195452

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