arXiv subjects

David A. Ruiz-Tijerina

Publications and source records attributed to David A. Ruiz-Tijerina.

At least 19 recordsLinked to original sources

arXiv2026

Floquet engineering of topological bands in semiconductor van der Waals heterobilayers

We show that periodic driving with near-infrared to visible light drives topological phase transitions in the photon-dressed band structure of transition-metal dichalcogenide heterobilayers. We apply the Floquet formalism to a light-coupled lowest-order $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian, and obtain an effective four-band model that correctly captures the essential photon-dressed bands of type-II TMD heterobilayers in the vicinity of the first photon resonance. Crossings between the zero- and one-photon sectors effectively invert the bands, yielding topological phases with Chern numbers up to $\pm 2$ and gaps of order 10 meV. Our results establish TMDs as prime candidates for engineering bands with higher Chern numbers, and exploring driven topological states in solid state media.

cond-mat.mes-hall↗

arXiv2025

Moiré excitons and exciton-polaritons: A review

Distinguished by their long lifetimes, strong dipolar interactions, and periodic confinement, moiré excitons provide a fertile territory for realizing interaction-driven excitonic phases beyond conventional semiconductor systems. Formed in twisted or lattice-mismatched van der Waals heterostructures, these excitons are shaped by a periodic potential landscape that enables the engineering of flat bands, strong interactions, and long-lived localised states. This has opened pathways to explore strongly correlated phases, including excitonic insulators, superfluids, and supersolids, potentially stable even at room temperature. When embedded in optical cavities, moiré excitons hybridize with photons to form moiré exciton-polaritons, a new class of quasiparticles exhibiting enhanced optical nonlinearities and novel topological features. In this review, we survey the theoretical foundations and experimental progress in the field of moiré excitons and polaritons. We begin by introducing the formation mechanisms of moiré patterns in two-dimensional semiconductors, and describe their impact on exciton confinement, optical selection rules, and spin-valley physics. We then discuss recent advances in the realization of many-body excitonic phases and exciton-based probes of electronic correlations. Finally, we explore the novel aspects of moiré polaritons, highlighting their unique nonlinear and topological properties. By bridging quantum optics, nanophotonics, and correlated electron systems, moiré excitons offer a powerful solid-state platform for quantum simulation, optoelectronic applications, and many-body photonics.

cond-mat.mes-hall↗

arXiv2025

Moiré-Polaritons in a Dark Bose-Einstein Condensate

Quantum mixtures of moiré excitons have arisen as a platform for realizing novel phases of light and matter. Here, we study moiré polaritons coupled to a Bose-Einstein condensate of dark-state excitons confined to a moiré superlattice. We develop a variational approach to analyze the optical response of the system and demonstrate that strong exciton-exciton interactions significantly modify the character of moiré polaritons, leading to sizable energy shifts of the avoided crossing between the principal polariton branches, and the emergence of an additional, stable repulsive-polariton bound state.

cond-mat.mes-hall↗

arXiv2023

Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers

Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties.

cond-mat.mtrl-sci↗

arXiv2023

Dimensionality crossover for moiré excitons in twisted bilayers of anisotropic two-dimensional semiconductors

We study the energies and optical spectra of excitons in twisted bilayers of anisotropic van der Waals semiconductors exhibiting moiré patterns, taking phosphorene as a case study. Following the electronic Hamiltonian introduced by us in [Phys. Rev. B 105, 235421 (2022)], and leveraging the scale separation between the moiré lengthscale and the exciton Bohr radii, we introduce a continuous model for excitons that incorporates the spatial variation of their binding energies. Our zone-folding calculations reveal a dimensionality crossover for the exciton states, driven by the combined dispersion- and moiré potential anisotropies, from quantum-dot-like (0D) lattices at twist angles $θ<θ_*$, to quantum-wire-like (1D) arrays at $θ>θ_*$, with crossover angle $θ_*=4^\circ$. We identify clear signatures of this dimensionality crossover in the twist angle dependence of the excitonic absorption spectra, which allows experimental verification of our theoretical results through standard optical measurements. Our results establish two-dimensional anisotropic moiré semiconductors as versatile solid-state platforms for exploring bosonic correlations across different dimensionalities.

cond-mat.mes-hall↗

arXiv2023

Spin-valley locking in Kekulé-distorted graphene with Dirac-Rashba interactions

The joint effects of Kekulé lattice distortions and Rashba-type spin-orbit coupling on the electronic properties of graphene are explored. We modeled the position dependence of the Rashba energy term in a manner that allows its seamless integration into the scheme introduced by Gamayun et al.[New J. Phys. 20, 023016 (2018)] to describe graphene with Kekulé lattice distortion. Particularly for the Kekulé-Y texture, the effective low energy Dirac Hamiltonian contains a new spin-valley locking term, in addition to the well-known Rashba-induced momentum-pseudospin and spin-pseudospin couplings, and the Kekulé-induced momentum-valley coupling term. We report on the low-energy band structure and Landau level spectra of Rashba-spin-orbit-coupled Kek-Y graphene, and propose an experimental scheme to discern between the presence of Rashba spin-orbit coupling, Kek-Y lattice distortion, and both, based on doping-dependent magnetotransport measurements.

cond-mat.mes-hall↗

arXiv2022

Moiré band structures of twisted phosphorene bilayers

We report on the theoretical electronic spectra of twisted phosphorene bilayers exhibiting moiré patterns, as computed by means of a continuous approximation to the moiré superlattice Hamiltonian. Our model is constructed by interpolating between effective $Γ$-point conduction- and valence-band Hamiltonians for the different stacking configurations approximately realized across the moiré supercell, formulated on symmetry grounds. We predict the realization of three distinct regimes for $Γ$-point electrons and holes at different twist angle ranges: a Hubbard regime for small twist angles $θ< 2^\circ$, where the electronic states form arrays of quantum-dot-like states, one per moiré supercell; a Tomonaga-Luttinger regime at intermediate twist angles $2^\circ < θ\lesssim 10^\circ$, characterized by the appearance of arrays of quasi-1D states; and finally, a ballistic regime at large twist angles $θ\gtrsim 10^\circ$, where the band-edge states are delocalized, with dispersion anisotropies modulated by the twist angle. Our method correctly reproduces recent results based on large-scale ab initio calculations at a much lower computational cost, and with fewer restrictions on the twist angles considered.

cond-mat.mes-hall↗

arXiv2021

Multifaceted moiré superlattice physics in twisted WSe$_2$ bilayers

Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (P) and anti-parallel (AP) orientations of the monolayer unit cells. We apply these models to describe moiré superlattice effects in twisted WSe${}_2$ bilayers, in conjunction with microscopic \emph{ab initio} calculations, and considering the influence of encapsulation, pressure and an electric displacement field. Our analysis takes into account mesoscale lattice relaxation, interlayer hybridisation, piezopotentials, and a weak ferroelectric charge transfer between the layers, and describes a multitude of possibilities offered by this system, depending on the choices of P or AP orientation, twist angle magnitude, and electron/hole valley.

cond-mat.mes-hall↗

arXiv2021

Excited Rydberg States in TMD Heterostructures

The functional form of Coulomb interactions in the transition metal dichalcogenides and other van der Waals solids is critical to many of their unique properties, e.g. strongly-correlated electron states, superconductivity and emergent ferromagnetism. This paper presents measurements of key excitonic energy levels in MoSe2/WSe2 heterostructures. These measurements are obtained from resonance Raman experiments on specific Raman peaks only observed at excited states of the excitons. This data is used to validate a model of the Coulomb potential in these structures which predicts the exciton energies to within ~5 meV / 2.5%. This model is used to determine the effect of heterostructure formation on the single-particle band gaps of the layers and will have a wide applicability in designing the next generation of more complex transition metal dichalcogenide structures.

cond-mat.mes-hall↗

arXiv2021

Theory of moiré localized excitons in transition-metal dichalcogenide heterobilayers

Transition-metal dichalcogenide heterostructures exhibit moiré patterns that spatially modulate the electronic structure across the material's plane. For certain material pairs, this modulation acts as a potential landscape with deep, trigonally symmetric wells capable of localizing interlayer excitons, forming periodic arrays of quantum emitters. Here, we study these moiré localized exciton states and their optical properties. By numerically solving the two-body problem for an interacting electron-hole pair confined by a trigonal potential, we compute the localized exciton spectra for different pairs of materials. We derive optical selection rules for the different families of localized states, each belonging to one of the irreducible representations of the potential's symmetry group $C_{3v}$, and numerically estimate their polarization-resolved absorption spectra. We find that the optical response of localized moiré interlayer excitons is dominated by states belonging to the doubly-degenerate $E$ irreducible representation. Our results provide new insights into the optical properties of artificially confined excitons in two-dimensional semiconductors.

cond-mat.mes-hall↗

arXiv2020

Superposition of intra- and inter-layer excitons in twistronic MoSe$_2$/WSe$_2$ bilayers probed by resonant Raman scattering

Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer and intralayer excitons. For MoSe$_2$/WSe$_2$ heterostructures, strong hybridization occurs between the holes in the spin-split valence band of WSe$_2$ and in the top valence band of MoSe$_2$, especially when both are bound to the same electron in the lowest conduction band of WSe$_2$. Here we use resonance Raman scattering to provide direct evidence for the hybridisation of excitons in twistronic MoSe$_2$/WSe$_2$ structures, by observing scattering of specific excitons by phonons in both WSe$_2$ and MoSe$_2$. We also demonstrate that resonance Raman scattering spectroscopy opens up a wide range of possibilities for quantifying the layer composition of the superposition states of the exciton and the interlayer hybridisation parameters in heterostructures of two-dimensional materials.

cond-mat.mes-hall↗

arXiv2019

Multi-flavor Dirac fermions in Kekulé-distorted graphene bilayers

Graphene's electronic structure can be fundamentally altered when a substrate- or adatom-induced Kekulé superlattice couples the valley and isospin degrees of freedom. Here, we show that the band structure of Kekulé-textured graphene can be re-engineered through layer stacking. We predict a family of Kekulé graphene bilayers that exhibit band structures with up to six valleys, and room-temperature Dirac quasiparticles whose masses can be tuned electrostatically. Fermi velocities half as large as in pristine graphene put this system in the strongly coupled regime, where correlated ground states can be expected.

cond-mat.mes-hall↗

arXiv2019

Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer

Due to their unique two-dimensional nature, charge carriers in semiconducting transition metal dichalcogenides (TMDs) exhibit strong unscreened Coulomb interactions and sensitivity to defects and impurities. The versatility of van der Waals layer stacking allows spatially separating electrons and holes between different TMD layers with staggered band structure, yielding interlayer few-body excitonic complexes whose nature is still debated. Here we combine quantum Monte Carlo calculations with spectrally and temporally resolved photoluminescence measurements on a top- and bottom-gated MoSe2/WSe2 heterostructure, and identify the emitters as impurity-bound interlayer excitonic complexes. Using independent electrostatic control of doping and out-of-plane electric field, we demonstrate control of the relative populations of neutral and charged complexes, their emission energies on a scale larger than their linewidth, and an increase of their lifetime into the microsecond regime. This work unveils new physics of confined carriers and is key to the development of novel optoelectronics applications.

cond-mat.mes-hall↗

arXiv2019

Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures

Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2019

Interlayer hybridization and moiré superlattice minibands for electrons and excitons in heterobilayers of transition-metal dichalcogenides

Geometrical moiré patterns, generic for almost aligned bilayers of two-dimensional (2D) crystals with similar lattice structure but slightly different lattice constants, lead to zone folding and miniband formation for electronic states. Here, we show that moiré superlattice (mSL) effects in $\mathrm{MoSe}_2/\mathrm{WS}_2$ and $\mathrm{MoTe}_2/\mathrm{MoSe}_2$ heterobilayers that feature alignment of the band edges are enhanced by resonant interlayer hybridization, and anticipate similar features in twisted homobilayers of TMDs, including examples of narrow minibands close to the actual band edges. Such hybridization determines the optical activity of interlayer excitons in transition-metal dichalcogenide (TMD) heterostructures, as well as energy shifts in the exciton spectrum. We show that the resonantly hybridized exciton (hX) energy should display a sharp modulation as a function of the interlayer twist angle, accompanied by additional spectral features caused by umklapp electron-photon interactions with the mSL. We analyze the appearance of resonantly enhanced mSL features in absorption and emission of light by the interlayer exciton hybridization with both intralayer A and B excitons in $\mathrm{MoSe}_2/\mathrm{WS}_2$, $\mathrm{MoTe}_2/\mathrm{MoSe}_2$, $\mathrm{MoSe}_2/\mathrm{MoS}_2$, $\mathrm{WS}_2/\mathrm{MoS}_2$, and $\mathrm{WSe}_2/\mathrm{MoSe}_2$.

cond-mat.mes-hall↗

arXiv2018

Hybrid k$\cdot$p tight-binding model for subbands and infrared intersubband optics in few-layer films of transition-metal dichalcogenides: MoS$_2$, MoSe$_2$, WS$_2$ and WSe${}_2$

We present a density functional theory parametrized hybrid k$\cdot$p tight binding model for electronic properties of atomically thin films of transition-metal dichalcogenides, 2H-$MX_2$ ($M$=Mo, W; $X$=S, Se). We use this model to analyze intersubband transitions in $p$- and $n$-doped $2{\rm H}-MX_2$ films and predict the line shapes of the intersubband excitations, determined by the subband-dependent two-dimensional electron and hole masses, as well as excitation lifetimes due to emission and absorption of optical phonons. We find that the intersubband spectra of atomically thin films of the 2H-${MX_2}$ family with thicknesses of $N=2$ to $7$ layers densely cover the infrared spectral range of wavelengths between $2$ and $30\ {\rm μm}$. The detailed analysis presented in this paper shows that for thin $n$-doped films, the electronic dispersion and spin-valley degeneracy of the lowest-energy subbands oscillate between odd and even number of layers, which may also offer interesting opportunities for quantum Hall effect studies in these systems.

cond-mat.mes-hall↗

arXiv2018

Nano-imaging of intersubband transitions in van der Waals quantum wells

The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantized states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatility by diffusive interfaces and the requirement of lattice-matched growth conditions. Here, we introduce the concept of intersubband transitions in van der Waals quantum wells and report their first experimental observation. Van der Waals quantum wells are naturally formed by two-dimensional (2D) materials and hold unexplored potential to overcome the aforementioned limitations: They form atomically sharp interfaces and can easily be combined into heterostructures without lattice-matching restrictions. We employ near-field local probing to spectrally resolve and electrostatically control the intersubband absorption with unprecedented nanometer-scale spatial resolution. This work enables exploiting intersubband transitions with unmatched design freedom and individual electronic and optical control suitable for photodetectors, LEDs and lasers.

cond-mat.mes-hall↗

arXiv2018

Localized interlayer complexes in heterobilayer transition metal dichalcogenides

We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe$_2$/WSe$_2$ twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in few $μ$s$^{-1}$ radiative rates. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite radiative rate with a strong asymptotic twist angle dependence $\propto θ^{-8}$. Finally, phonon-assisted recombination is considered, with emission of optical phonons in both layers resulting in additional weaker emission lines, redshifted by the phonon energy.

cond-mat.mes-hall↗