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arXiv · 1802.07785

Gate-tunable memristors from monolayer MoS2

Vinod K. Sangwan·Hong-Sub Lee·Mark C. Hersam
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Abstract

We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes of 3-5 um. The device characteristics show switching ratios up to 500, with the resistance in individual states being continuously gate-tunable by over three orders of magnitude. The resistive switching results from dynamically varying threshold voltage and Schottky barrier heights, whose underlying physical mechanism appears to be vacancy migration and/or charge trapping. Top-gated devices achieve reversible tuning of the threshold voltage, with potential utility in non-volatile memory or neuromorphic architectures.

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Vinod K. Sangwan, Hong-Sub Lee, Mark C. Hersam. 2018-02-21. Gate-tunable memristors from monolayer MoS2. https://arxiv.org/abs/1802.07785

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