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arXiv · 1802.08449

Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2

Erik Piatti·Qihong Chen·Mauro Tortello·Jianting Ye·Renato S. Gonnelli
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Abstract

We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS$_2$. We encapsulate the flake by Al$_2$O$_3$, leaving the device channel exposed at the edges only. A stable Li$^+$ intercalation in the MoS$_2$ lattice is induced by gating the samples with a Li-based polymeric electrolyte above $\sim$ 330 K and the doping state is fixed by quenching the device to $\sim$ 300 K. This intercalation process induces the emergence of anomalies in the temperature dependence of the sheet resistance and its first derivative, which are typically associated with structural/electronic/magnetic phase transitions. We suggest that these anomalies in the resistivity of MoS$_2$ can be naturally interpreted as the signature of a transition to a charge-density-wave phase induced by lithiation, in accordance with recent theoretical calculations.

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Erik Piatti, Qihong Chen, Mauro Tortello, Jianting Ye, Renato S. Gonnelli. 2018-02-23. Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2. https://doi.org/10.1016/j.apsusc.2018.05.232

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