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arXiv · 1804.05344

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

Anup V. Sanchela·Mian Wei·Haruki Zensyo·Bin Feng·Joonhyuk Lee·Gowoon Kim·Hyoungjeen Jeen·Yuichi Ikuhara·Hiromichi Ohta
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Abstract

We report herein that the carrier mobility of the 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness whereas it is unrelated to the lattice mismatch (+5.4% for SrTiO3, -2.3% for MgO). Although we observed large differences in the lattice parameters, the lateral grain size (~85 nm for SrTiO3, ~20 nm for MgO), the surface morphology and the density of misfit dislocations, the mobility increased almost simultaneously with the thickness in both cases and saturated at ~100 cm2 V-1 s-1, together with the approaching to the nominal carrier concentration (=[2% La3+]), clearly indicating that the behavior of mobility depends on the film thickness. The present results would be beneficial to understand the behavior of mobility and fruitful to further enhance the mobility of LBSO films.

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Anup V. Sanchela, Mian Wei, Haruki Zensyo, Bin Feng, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, Yuichi Ikuhara, Hiromichi Ohta. 2018-05-03. Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3. https://doi.org/10.1063/1.5033326

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