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arXiv · 1804.09848

Memristor Crossbars with 4.5 Terabits-per-Inch-Square Density and Two Nanometer Dimension

Shuang Pi·Can Li·Hao Jiang·Weiwei Xia·Huolin Xin·J. Joshua Yang·Qiangfei Xia
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Abstract

Memristor is a promising building block for the next generation nonvolatile random access memory and bio-inspired computing systems. Organizing memristors into high density crossbar arrays, although challenging, is critical to meet the ever-growing high capacity and low energy demands of these applications especially in the big data era. Here, we construct memristor crossbars with a single-layer density up to 4.5 terabits per inch square, an order of magnitude denser than the state- of-the-art 64-layer triple level cell NAND flash technology. The memristors in the crossbars are 2 $\times$ 2 nm$^2$ in size, capable of switching with tens of nano ampere electric current. The densely packed memristor crossbars of extremely small working devices provides a power-efficient solution for high density information storage and processing.

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Shuang Pi, Can Li, Hao Jiang, Weiwei Xia, Huolin Xin, J. Joshua Yang, Qiangfei Xia. 2018-04-26. Memristor Crossbars with 4.5 Terabits-per-Inch-Square Density and Two Nanometer Dimension. https://doi.org/10.1038/s41565-018-0302-0

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