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arXiv · 1805.00527

Strongly correlated proton-doped perovskite nickelate memory devices

Koushik Ramadoss·Fan Zuo·Yifei Sun·Zhen Zhang·Jianqiang Lin·Umesh Bhaskar·SangHoon Shin·Muhammad Ashraful Alam·Supratik Guha·Dana Weinstein·Shriram Ramanathan
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Abstract

We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are 300X greater than what has been noted with proton-driven resistance switching to date. The ionic-electronic correlated oxide memory devices also exhibit multi-state non-volatile switching. The results are of relevance to use of quantum materials in emerging memory and neuromorphic computing.

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Koushik Ramadoss, Fan Zuo, Yifei Sun, Zhen Zhang, Jianqiang Lin, Umesh Bhaskar, SangHoon Shin, Muhammad Ashraful Alam, Supratik Guha, Dana Weinstein, Shriram Ramanathan. 2018-05-01. Strongly correlated proton-doped perovskite nickelate memory devices. https://arxiv.org/abs/1805.00527

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