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arXiv · 1805.05621

Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

Youcef A. Bioud·Abderraouf Boucherif·Etienne Paradis·Ali Soltani·Dominique Drouin·Richard Arès
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Abstract

A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation .

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Youcef A. Bioud, Abderraouf Boucherif, Etienne Paradis, Ali Soltani, Dominique Drouin, Richard Arès. 2018-05-15. Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids. https://arxiv.org/abs/1805.05621

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