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arXiv · 1805.06972

Relaxation and Domain Formation in Incommensurate 2D Heterostructures

Stephen Carr·Daniel Massatt·Steven B. Torrisi·Paul Cazeaux·Mitchell Luskin·Efthimios Kaxiras
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Abstract

We introduce configuration space as a natural representation for calculating the mechanical relaxation patterns of incommensurate two-dimensional (2D) bilayers, bypassing supercell approximations to encompass aperiodic relaxation patterns. The approach can be applied to a wide variety of 2D materials through the use of a continuum model in combination with a generalized stacking fault energy for interlayer interactions. We present computational results for small-angle twisted bilayer graphene and molybdenum disulfide (MoS$_2$), a representative material of the transition metal dichalcogenide (TMDC) family of 2D semiconductors. We calculate accurate relaxations for MoS$_2$ even at small twist-angle values, enabled by the fact that our approach does not rely on empirical atomistic potentials for interlayer coupling. The results demonstrate the efficiency of the configuration space method by computing relaxations with minimal computational cost for twist angles down to $0.05^\circ$, which is smaller than what can be explored by any available real space techniques. We also outline a general explanation of domain formation in 2D bilayers with nearly-aligned lattices, taking advantage of the relationship between real space and configuration space.

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Stephen Carr, Daniel Massatt, Steven B. Torrisi, Paul Cazeaux, Mitchell Luskin, Efthimios Kaxiras. 2018-05-17. Relaxation and Domain Formation in Incommensurate 2D Heterostructures. https://doi.org/10.1103/physrevb.98.224102

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