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arXiv · 1806.01475

Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer

Yang Ji·J. Miao·K. K. Meng·X. G. Xu·J. K. Chen·Y. Wu·Y. Jiang
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Abstract

The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) are observed in a Cr2O3/Ta structure. The structural and surface morphology of Cr2O3/Ta bilayers have been investigated. Temperature dependence of longitudinal and transverse resistances measurements confirm the relationship between SMR and AHE signals in Cr2O3/Ta structure. By means of temperature dependent magnetoresistance measurements, the physical origin of SMR in the Cr2O3/Ta structure is revealed, and the contribution to the SMR from the spin current generated by AHE has been proved. The so-called boundary magnetization due to the bulk antiferromagnetic order in Cr2O3 film may be responsible for the relationship of SMR and AHE in the Cr2O3/Ta bilayer.

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Yang Ji, J. Miao, K. K. Meng, X. G. Xu, J. K. Chen, Y. Wu, Y. Jiang. 2018-06-05. Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer. https://arxiv.org/abs/1806.01475

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