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arXiv · 1806.06479

Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Seok Joon Yun·Dinh Loc Duong·Manh-Ha Doan·Kirandeep Singh·Thanh Luan Phan·Wooseon Choi·Young-Min Kim·Young Hee Lee
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Abstract

Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-doping concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics.

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Seok Joon Yun, Dinh Loc Duong, Manh-Ha Doan, Kirandeep Singh, Thanh Luan Phan, Wooseon Choi, Young-Min Kim, Young Hee Lee. 2018-06-18. Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant. https://doi.org/10.1002/advs.201903076

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