arXiv subjects

Dinh Loc Duong

Publications and source records attributed to Dinh Loc Duong.

12 recordsLinked to original sources

arXiv2026

Predicting spin orbit coupling effect in the electronic and magnetic properties of cobalt (Co) doped WSe2 monolayer

The electronic and magnetic properties of cobalt (Co) doped monolayer (ML) tungsten diselenide (WSe2) are investigated using the density functional theory with the on-site Hubbard potential correction (DFT+U) for the localized d orbitals of Co atom taking into account the spin orbit coupling (SOC) interaction. The results show that the substitution of Co at the W sites of ML WSe2 is energetically favorable under Se rich environment. We noticed that the Hund's exchange splitting (ΔH_{ex}) is dominant over the crystal field splitting (Δ_{cf}). The induced magnetic moment due to the Co-doped defect is ~3.00 μ_B per Co atom. The magnetic interaction between two Co atoms at the nearest neighbor separation depends mainly on the concentration of the impurity atoms. The calculated value of curie temperature (TC) is increasing with increasing impurity concentration satisfying the Zener model. Based on the results, it can be proposed that the Co-doped WSe2 monolayer is potential candidate to apply in spintronics, optoelectronics, and magnetic storage devices.

cond-mat.mtrl-sci↗

arXiv2026

Chern Insulator in magnetic-doped two-dimensional semiconductors

We propose an approach to induce nontrivial bands with non-zero Chern numbers by utilizing strong spin-orbit coupling in transition metal dichalcogenides with dopants. We demonstrate that a doped state near the valence-band edge induces band inversion with the hybridized host band, leading to topologically non-trivial properties. Calculations for V-doped WSe2 and WS2 confirm this mechanism. The coexistence of magnetic order and nontrivial topology in these systems offers a promising platform for exploring the quantum anomalous Hall effect.

cond-mat.mes-hall↗

arXiv2025

Electrical Spin-Flip Current Switching in Layered Diluted Magnetic Semiconductors for Ultralow-Power Spintronics

Efficient magnetic switching is a cornerstone for advancing spintronics, particularly for energy-efficient data storage and memory devices. Here, we report the electrical switching of spin-flips in V-doped WSe2 multilayers, a van der Waals (vdW)-layered diluted magnetic semiconductor (DMS), demonstrating ultralow-power switching operation at room temperature. Our study reveals unique linear magnetoresistance and parabolic magnetoresistance states, where electrical modulation induces transitions between interlayered ferromagnetic, ferrimagnetic, and antiferromagnetic configurations. We identify an unconventional linear magnetoresistance hysteresis characterized by electrically driven spin flip/flop switching, distinct from conventional random network disorder or linear band-dispersion mechanisms. Applying an electrical voltage across vertical vdW layered V-doped WSe2 multilayers generates the spin currents at room temperature, driving spin-flip transitions from ferromagnetic to antiferromagnetic states due to a strong spin transfer torque effect. Notably, the critical current density reaches an ultralow value of 10-1Acm-2, accompanied by pico-watt power consumption, a record-low spin current density by a six-order-of-magnitude improvement over conventional spintronic devices. These findings establish the V-doped WSe2 multilayer device as a transformative platform for ultralow power spintronics, underscoring the potential of vdW-layered DMS systems for next generation energy-efficient spintronic technologies.

cond-mat.mtrl-sci↗

arXiv2022

Incommensurate antiferromagnetic order in weakly frustrated two-dimensional van der Waals insulator CrPSe$_3$

Although the magnetic order is suppressed by a strong magnetic frustration, it is maintained but appears in complex order forms such as a cycloid or spin density wave in weakly frustrated systems. Herein, we report a weakly magnetic-frustrated two-dimensional van der Waals material CrPSe$_3$. Polycrystalline CrPSe$_3$ was synthesized at an optimized temperature of 700$^\circ$C to avoid the formation of any secondary phases (e.g., Cr$_2$Se$_3$). The antiferromagnetic transition appeared at $T_N\sim 126$ K with a large Curie-Weiss temperature $T_{\rm CW} \sim -371$ via magnetic susceptibility measurements, indicating weak frustration in CrPSe$_3$ with a frustration factor $f (|T_{\rm CW}|/T_N) \sim 3$. Evidently, the formation of long-range incommensurate spin-density wave antiferromagnetic order with the propagation vector $k = (0, 0.04, 0)$ was revealed by neutron diffraction measurements at low temperatures (below 120K). The monoclinic crystal structure of C2/m symmetry is preserved over the studied temperature range down to 20K, as confirmed by Raman spectroscopy measurements. Our findings on the spin density wave antiferromagnetic order in two-dimensional (2D) magnetic materials, not previously observed in the MPX$_3$ family, are expected to enrich the physics of magnetism at the 2D limit, thereby opening opportunities for their practical applications in spintronics and quantum devices.

cond-mat.mtrl-sci↗

arXiv2022

Observation of strange metal in hole-doped valley-spin insulator

Temperature-linear resistance at low temperatures in strange metals is an exotic characteristic of strong correlation systems, as observed in high-TC superconducting cuprates, heavy fermions, Fe-based superconductors, ruthenates, and twisted bilayer graphene. Here, we introduce a hole-doped valley-spin insulator, V-doped WSe2, with hole pockets in the valence band. The strange metal characteristic was observed in VxW1-xSe2 at a critical carrier concentration of 9.5 x 10^20 cm-3 from 150 K to 1.8 K. The unsaturated magnetoresistance is almost linearly proportional to the magnetic field. Using the ansatz R(H,T) - R(0,0) ~ [(alpha.k.T)^2+(gamma.mu.B)^2]^1/2, the gamma/alpha ratio is estimated approximately to 4, distinct from that for the quasiparticles of LSCO, BaFe2(As1-xPx)2 (gamma/alpha=1) and bosons of YBCO (gamma/alpha=2). Our observation opens up the possible routes that induce strong correlation and superconductivity in two-dimensional materials with strong spin-orbit coupling.

cond-mat.str-el↗

arXiv2021

Spin-orbit torque: Moving towards two-dimensional van der Waals heterostructures

The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current technology for magnetic switching with spin-transfer torque requires high current densities, whereas gate-tunable magnetic materials such as ferromagnetic semiconductors and multiferroic materials are still far from practical applications. Recently, magnetic switching induced by pure spin currents using the spin Hall and Rashba effects in heavy metals, called spin-orbit torque (SOT), has emerged as a candidate for designing next-generation magnetic memory with low current densities. The recent discovery of topological materials and two-dimensional (2D) van der Waals (vdW) materials provides opportunities to explore versatile 3D-2D and 2D-2D heterostructures with interesting characteristics. In this review, we introduce the emerging approaches to realizing SOT nanodevices including techniques to evaluate the SOT efficiency as well as the opportunities and challenges of using 2D topological materials and vdW materials in such applications.

physics.app-ph↗

arXiv2020

Light-controlled room temperature ferromagnetism in vanadium-doped tungsten diselenide semiconducting monolayers

Atomically thin transition metal dichalcogenide (TMD) semiconductors hold enormous potential for modern optoelectronic devices and quantum computing applications. By inducing long-range ferromagnetism (FM) in these semiconductors through the introduction of small amounts of a magnetic dopant, it is possible to extend their potential in emerging spintronic applications. Here, we demonstrate light-mediated, room temperature (RT) FM, in V-doped WS2 (V-WS2) monolayers. We probe this effect using the principle of magnetic LC resonance, which employs a soft ferromagnetic Co-based microwire coil driven near its resonance in the radio frequency (RF) regime. The combination of LC resonance with an extraordinary giant magneto-impedance effect, renders the coil highly sensitive to changes in the magnetic flux through its core. We then place the V-WS2 monolayer at the core of the coil where it is excited with a laser while its change in magnetic permeability is measured. Notably, the magnetic permeability of the monolayer is found to depend on the laser intensity, thus confirming light control of RT magnetism in this two-dimensional (2D) material. Guided by density functional calculations, we attribute this phenomenon to the presence of excess holes in the conduction and valence bands, as well as carriers trapped in the magnetic doping states, which in turn mediates the magnetization of the V-WS2 monolayer. These findings provide a unique route to exploit light-controlled ferromagnetism in low powered 2D spintronic devices capable of operating at RT.

cond-mat.mtrl-sci↗

arXiv2020

Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants

One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic doping concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive understanding of the mechanism responsible for the gate-tunable long-range magnetic order in DMSs has not been achieved yet. Here, we introduce a monolayer tungsten diselenide (WSe2) semiconductor with V dopants to demonstrate the long-range magnetic order through itinerant spin-polarized holes. The V atoms are sparsely located in the host lattice by substituting W atoms, which is confirmed by scanning tunneling microscopy and high-resolution transmission electron microscopy. The V impurity states and the valence band edge states are overlapped, which is congruent with density functional theory calculations. The field-effect transistor characteristics reveal the itinerant holes within the hybridized band; this clearly resembles the Zener model. Our study gives an insight into the mechanism of the long-range magnetic order in V-doped WSe2, which can also be used for other magnetically doped semiconducting transition metal dichalcogenides.

cond-mat.mtrl-sci↗

arXiv2020

Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-doping concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics.

cond-mat.mtrl-sci↗

arXiv2020

Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor

We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V doping concentration. The hole-mediated long-range magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.

cond-mat.mtrl-sci↗

arXiv2015

Ab initio computation of the transition temperature of the charge density wave transition in TiSe2

We present a density functional perturbation theory approach to estimate the transition temperature of the charge density wave transition of TiSe2. The softening of the phonon mode at the L-point where in TiSe2 a giant Kohn anomaly occurs, and the energy difference between the normal and distorted phase are analyzed. Both features are studied as function of the electronic temperature, which corresponds to the Fermi-Dirac distribution smearing value in the calculation. The transition temperature is found to be 500 K and 600 K by phonon and energy analysis, respectively, in reasonable agreement with the experimental value of 200 K.

cond-mat.mtrl-sci↗

arXiv2015

Charge Transport in Polycrystalline Graphene: Challenges and Opportunities

Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. Unfortunately, CVD graphene is intrinsically polycrystalline, with pristine graphene grains stitched together by disordered grain boundaries, which can be either a blessing or a curse. On the one hand, grain boundaries are expected to degrade the electrical and mechanical properties of polycrystalline graphene, rendering the material undesirable for many applications. On the other hand, they exhibit an increased chemical reactivity, suggesting their potential application to sensing or as templates for synthesis of one-dimensional materials. Therefore, it is important to gain a deeper understanding of the structure and properties of graphene grain boundaries. Here, we review experimental progress on identification and electrical and chemical characterization of graphene grain boundaries. We use numerical simulations and transport measurements to demonstrate that electrical properties and chemical modification of graphene grain boundaries are strongly correlated. This not only provides guidelines for the improvement of graphene devices, but also opens a new research area of engineering graphene grain boundaries for highly sensitive electrobiochemical devices.

cond-mat.mtrl-sci↗