Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p-n Junctions III. Self-heating effects

Abstract

Self-heating effects of picosecond optoelectronic switches based on vertical high-voltage structures with p-n-junctions (VPSS) operating in a high-frequency mode were theoretically studied for the first time. It is shown that strong temperature dependence of the control radiation absorption coefficient $k(T)$ is the main factor determining the maximum switching frequency $f_{max}$ and the corresponding maximum crystal temperature $T_{max}$, as well as distributions of temperature $T$ and current density $j$ over a device area. A two-dimensional analysis of the simplest electrothermal model of VPSS embedded into a double coaxial forming line showed that an increase in the switching frequency $f$ leads to displacement of current to device periphery, where the temperature is minimal. However, distributions of $T$ and $j$ over the device area remain stable if $f < f_{max}$ and $T < T_{max}$. Of course, the values $f_{max}$ and $T_{max}$ depend on the energy of control radiation pulses, pulse switching power and heat sink conditions. For VPSS based on nondirect-gap semiconductors (Si, SiC), they varies within 20-120 kHz and 120-160 $^o C$, quite sufficient for practical application. However, VPSS based on direct-gap semiconductors (GaAs, InP) are not actually suitable for operation in high-frequency modes due to too sharp dependence $k(T)$.