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arXiv · 1807.00306

Bi monocrystal formation on InAs(111)A and B substrates

L. Nicolaï·J. -M. Mariot·U. Djukic·W. Wang·O. Heckmann·M. C. Richter·J. Kanski·M. Leandersson·J. Sadowski·T. Balasubramanian·I. Vobornik·J. Fujii·J. Braun·H. Ebert·J. Minár·K. Hricovini
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Abstract

The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a $\approx 10$~BL deposit on the A face is identical to that of bulk Bi, while more than $\approx 30$ BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations.

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L. Nicolaï, J. -M. Mariot, U. Djukic, W. Wang, O. Heckmann, M. C. Richter, J. Kanski, M. Leandersson, J. Sadowski, T. Balasubramanian, I. Vobornik, J. Fujii, J. Braun, H. Ebert, J. Minár, K. Hricovini. 2018-07-01. Bi monocrystal formation on InAs(111)A and B substrates. https://arxiv.org/abs/1807.00306

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