Addressable electron spin resonance using donors and donor molecules in silicon

Samuel J. Hile; Lukas Fricke; Matthew G. House; Eldad Peretz; Chin Yi Chen; Yu Wang; Matthew Broome; Samuel K. Gorman; Joris G. Keizer; Rajib Rahman; Michelle Y. Simmons

doi:10.1126/sciadv.aaq1459

arXiv · 1807.10290

Addressable electron spin resonance using donors and donor molecules in silicon

Samuel J. Hile·Lukas Fricke·Matthew G. House·Eldad Peretz·Chin Yi Chen·Yu Wang·Matthew Broome·Samuel K. Gorman·Joris G. Keizer·Rajib Rahman·Michelle Y. Simmons

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Abstract

Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with separations ~15nm is challenging. Here we show that by using atomic-precision lithography we can place a single P donor next to a 2P molecule 16(+/-1)nm apart and use their distinctive hyperfine coupling strengths to address qubits at vastly different resonance frequencies. In particular the single donor yields two hyperfine peaks separated by 97(+/-2.5)MHz, in contrast to the donor molecule which exhibits three peaks separated by 262(+/-10)MHz. Atomistic tight-binding simulations confirm the large hyperfine interaction strength in the 2P molecule with an inter-donor separation of ~0.7nm, consistent with lithographic STM images of the 2P site during device fabrication. We discuss the viability of using donor molecules for built-in addressability of electron spin qubits in silicon.

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Samuel J. Hile, Lukas Fricke, Matthew G. House, Eldad Peretz, Chin Yi Chen, Yu Wang, Matthew Broome, Samuel K. Gorman, Joris G. Keizer, Rajib Rahman, Michelle Y. Simmons. 2018-07-26. Addressable electron spin resonance using donors and donor molecules in silicon. https://doi.org/10.1126/sciadv.aaq1459

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