arXiv subjects

Rajib Rahman

Publications and source records attributed to Rajib Rahman.

At least 19 recordsLinked to original sources

arXiv2026

Deterministic single-electron trapping on solid neon using engineered dielectric surface geometry

Levitating electron qubit on the surface of solid neon has recently emerged as a promising and intrinsically noise-resilient platform for quantum information processing. Their ultra-clean, inert environment suppresses conventional decoherence pathways associated with lattice disorder, charge traps, and nuclear-spin baths that limit coherence in semiconductor qubits. Yet, uncontrolled surface features such as bumps, valleys, and electrode-defined gaps can bind electrons unintentionally, contributing charge noise and inducing spin-orbit coupling mediated decoherence. To address this challenge, we propose an engineered interface in which a dielectric layer is deposited beneath the solid neon to provide an atomically smooth template, eliminating surface-roughness induced trapping. By selectively etching this dielectric layer at desired qubit locations, deterministic potential minima can be engineered to reliably capture electrons while suppressing unwanted surface bound states. We perform large-scale Schrodinger and Poisson simulation to compare the existing and proposed strategies of electron trapping on neon, obtaining good agreement with recent experimental measurements.

quant-ph↗

arXiv2026

Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation

Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not only enables multiple spin-control mechanisms, but also exposes the qubits to charge noise. In this work, we perform a systematic study of the spin control mechanism in a planar silicon hole quantum dot. We use g-matrix formalism to discern contributions from the various spin driving mechanisms and identify regions where spins are less sensitive to charge noise. By mapping out the dependence of the Rabi frequency on the magnetic field orientation, we observe the largest Rabi frequency in the in-plane direction and the smallest Rabi frequency close to the out-of-plane direction. These results enhance the understanding of how different mechanisms contribute to spin driving within an industrially relevant architecture and aid in establishing the operating conditions for the rapid and coherent manipulation of hole qubits.

cond-mat.mes-hall↗

arXiv2025

Characterizing Neon Thin Film Growth with an NbTiN Superconducting Resonator Array

Electrons levitating above the surface of solid neon have recently emerged as a promising platform for high-quality qubits. The morphology and uniformity of the neon growth in these systems is crucial for qubit performance in a scalable architecture. Here we report on the controlled growth and characterization of thin solid neon films using multiplexed superconducting microwave resonators. By monitoring changes in the resonant frequency and internal quality factor ($Q_i$) of an array of frequency multiplexed quarter-wave coplanar waveguide resonators, we quantify the spatial uniformity of the film. A pulsed gas deposition protocol near the neon triple point results in repeatable film formation, generating measurable shifts in frequency and variations in $Q_i$ across the resonator array. Notably, introducing a post-deposition anneal at 12 K for one hour improves the film homogeneity, as shown by the reduced resonator-to-resonator variance in frequency and $Q_i$, consistent with enhanced wetting. These results demonstrate resonator-based metrology as an in-situ tool for characterising neon film growth, directly supporting the development of electron on inert quantum solid qubit platforms.

cond-mat.mes-hall↗

arXiv2025

Effect of disorder and strain on the operation of planar Ge hole spin qubits

Germanium quantum dots in strained $\text{Ge}/\text{Si}_{1-x}\text{Ge}_{x}$ heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretically and numerically address the effects of random alloy disorder and gate-induced strain on the operation of planar Ge hole spin qubits. Electrical operation of hole quantum dot spin qubits is enabled by the strong Rashba spin-orbit coupling (SOC) originating from the intrinsic SOC in the Ge valence band as well as from the structural inversion asymmetry inherent in the underlying 2D hole gas. We use the atomistic valence force field (VFF) method to compute the strain due to random alloy disorder, and thermal expansion models in COMSOL Multiphysics to obtain the strain from a realistic gate-stack of planar hole quantum dot confinement. Recently, spin-orbit coupling terms $\propto k$ have been shown to be induced by strain inhomogeneity. Our hybrid approach to realistic device modeling suggests that strain inhomogeneity due to both random alloy disorder and gate-induced strain make a strong contribution to the linear-$k$ Dresselhaus spin-orbit coupling, which eventually dominates hole spin EDSR; and there exist specific in-plane orientations of the global magnetic field $\mathbf{B}$ and the microwave drive $\mathbf{\tilde{E}}_{\text{ac}}$ for maximum EDSR Rabi frequency of the hole spin qubit. The current model including strain inhomogeneity accurately predicts the EDSR Rabi frequency to be $\!\sim\!100$ MHz for typical electric and magnetic fields in experiments, which represents at least an order of magnitude improvement in accuracy over phenomenological models assuming uniform uniaxial strain. State-of-the-art atomistic tight binding calculations via nano-electronic modeling (NEMO3D) are in agreement with the $\mathbf{k}{\cdot}\mathbf{p}$ description.

cond-mat.mes-hall↗

arXiv2024

Spin-Hall effect in topological materials: Evaluating the proper spin current in systems with arbitrary degeneracies

The spin-Hall effect underpins some of the most active topics in modern physics, including spin torques and the inverse spin-Hall effect, yet it lacks a proper theoretical description. This makes it difficult to differentiate the SHE from other mechanisms, as well as differentiate band structure and disorder contributions. Here, by exploiting recent analytical breakthroughs in the understanding of the intrinsic spin-Hall effect, we devise a density functional theory method for evaluating the conserved (proper) spin current in a generic system. Spin non-conservation makes the conventional spin current physically meaningless, while the conserved spin current has been challenging to evaluate since it involves the position operator between Bloch bands. The novel method we introduce here can handle band structures with arbitrary degeneracies and incorporates all matrix elements of the position operator, including the notoriously challenging diagonal elements, which are associated with Fermi surface, group velocity, and dipolar effects but often diverge if not treated correctly. We apply this method to the most important classes of spin-Hall materials: topological insulators, 2D quantum spin-Hall insulators, non-collinear antiferromagnets, and strongly spin-orbit coupled metals. We demonstrate that the torque dipole systematically suppresses contributions to the conventional spin current such that, the proper spin current is generally smaller in magnitude and often has a different sign. Remarkably, its energy-dependence is relatively flat and featureless, and its magnitude is comparable in all classes of materials studied. These findings will guide the experiment in characterizing charge-to-spin interconversion in spintronic and orbitronic devices. We also discuss briefly a potential generalisation of the method to calculate extrinsic spin currents generated by disorder scattering.

cond-mat.mes-hall↗

arXiv2024

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon

While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. Our findings may provide a pathway towards all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).

cond-mat.mes-hall↗

arXiv2024

Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers

Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic mapping of defect wavefunctions reveals an interplay of local symmetry breaking by a charge-state dependent Jahn-Teller lattice distortion that, when combined with strong (~100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain. Our results provide new insights into spin and electronic structure of vacancy induced in-gap states towards their application as electrically and optically addressable quantum systems.

cond-mat.mes-hall↗

arXiv2023

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electrostatic crosstalk to the spin g-factors, creating a dependence of the Larmor frequency on the electric field created by gate electrodes positioned even tens of nanometers apart. By studying the Stark shift from tens of spin qubits measured in nine different CMOS devices, we developed a theoretical frawework that explains how electric fields couple to the spin of the electrons in increasingly complex arrays, including those electric fluctuations that limit qubit dephasing times $T_2^*$. The results will aid in the design of robust strategies to scale CMOS quantum technology.

cond-mat.mes-hall↗

arXiv2023

Superexchange coupling of donor qubits in silicon

Atomic engineering in a solid-state material has the potential to functionalize the host with novel phenomena. STM-based lithographic techniques have enabled the placement of individual phosphorus atoms at selective lattice sites of silicon with atomic precision. Here, we show that by placing four phosphorus donors spaced 10-15 nm apart from their neighbours in a linear chain, it is possible to realize coherent spin coupling between the end dopants of the chain, analogous to the superexchange interaction in magnetic materials. Since phosphorus atoms are a promising building block of a silicon quantum computer, this enables spin coupling between their bound electrons beyond nearest neighbours, allowing the qubits to be spaced out by 30-45 nm. The added flexibility in architecture brought about by this long-range coupling not only reduces gate densities but can also reduce correlated noise between qubits from local noise sources that are detrimental to error correction codes. We base our calculations on a full configuration interaction technique in the atomistic tight-binding basis, solving the 4-electron problem exactly, over a domain of a million silicon atoms. Our calculations show that superexchange can be tuned electrically through gate voltages where it is less sensitive to charge noise and donor placement errors.

cond-mat.mes-hall↗

arXiv2023

Spin-valley locking for in-gap quantum dots in a MoS2 transistor

Spins confined to atomically-thin semiconductors are being actively explored as quantum information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal lattice gives rise to an additional valley degree of freedom with spin-valley locking and potentially enhanced spin life- and coherence times. However, realizing well-separated single-particle levels, and achieving transparent electrical contact to address them has remained challenging. Here, we report well-defined spin states in a few-layer MoS$ _2$ transistor, characterized with a spectral resolution of $\sim{50~μ}$eV at ${T_\textrm{el} = 150}$~mK. Ground state magnetospectroscopy confirms a finite Berry-curvature induced coupling of spin and valley, reflected in a pronounced Zeeman anisotropy, with a large out-of-plane $g$-factor of ${g_\perp \simeq 8}$. A finite in-plane $g$-factor (${g_\parallel \simeq 0.55-0.8}$) allows us to quantify spin-valley locking and estimate the spin-orbit splitting ${2Δ_{\rm SO} \sim 100~μ}$eV. The demonstration of spin-valley locking is an important milestone towards realizing spin-valley quantum bits.

cond-mat.mes-hall↗

arXiv2023

First-Principles Study of Large Gyrotropy in MnBi for Infrared Thermal Photonics

Nonreciprocal gyrotropic materials have attracted significant interest recently in material physics, nanophotonics, and topological physics. Most of the well-known nonreciprocal materials, however, only show nonreciprocity under a strong external magnetic field and within a small segment of the electromagnetic spectrum. Here, through first-principles density functional theory calculations, we show that due to strong spin-orbit coupling manganese-bismuth (MnBi) exhibits nonreciprocity without any external magnetic field and a large gyrotropy in a broadband long-wavelength infrared regime (LWIR). Further, we design a multi-layer structure based on MnBi to obtain a maximum degree of spin-polarized thermal emission at 7 $μ$m. The connection established here between large gyrotropy and the spin-polarized thermal emission points to a potential use of MnBi to develop spin-controlled thermal photonics platforms.

cond-mat.mtrl-sci↗

arXiv2023

Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations

High-fidelity quantum gate operations are essential for achieving scalable quantum circuits. In spin qubit quantum computing systems, metallic gates and antennas which are necessary for qubit operation, initialization, and readout, also cause detriments by enhancing fluctuations of electromagnetic fields. Therefore evanescent wave Johnson noise (EWJN) caused by thermal and vacuum fluctuations becomes an important unmitigated noise, which induces the decay of spin qubits and limits the quantum gate operation fidelity. Here, we first develop a quantum electrodynamics theory of EWJN. Then we propose a numerical technique based on volume integral equations to quantify EWJN strength in the vicinity of nanofabricated metallic gates with arbitrary geometry. We study the limits to two spin-qubit gate fidelity from EWJN-induced relaxation processes in two experimentally relevant quantum computing platforms: (a) silicon quantum dot system and (b) NV centers in diamond. Finally, we introduce the Lindbladian engineering method to optimize the control pulse sequence design and show its enhanced performance over Hamiltonian engineering in mitigating the influence of thermal and vacuum fluctuations. Our work leverages advances in computational electromagnetics, fluctuational electrodynamics and open quantum systems to suppress the effects of thermal and vacuum fluctuations and reach the limits of two-spin-qubit gate fidelity.

quant-ph↗

arXiv2023

Bounds to electron spin qubit variability for scalable CMOS architectures

Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and developing theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.

quant-ph↗

arXiv2023

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we theoretically explore the interplay between quantum-well imperfections that suppress the valley splitting and cause variability, such as broadened interfaces and atomic steps at the interface, while self-consistently accounting for germanium concentration fluctuations. We consider both conventional and unconventional approaches for controlling the valley splitting, and present concrete strategies for implementing them. Our results provide a clear path for achieving qubit uniformity in a scalable silicon quantum computer.

cond-mat.mes-hall↗

arXiv2022

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the "Wiggle Well," whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 ueV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices.

quant-ph↗

arXiv2022

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting.

cond-mat.mes-hall↗

arXiv2022

Optimisation of electrically-driven multi-donor quantum dot qubits

Multi-donor quantum dots have been at the forefront of recent progress in Si-based quantum computation. Among them, $2P:1P$ qubits have a built-in dipole moment, enabling all-electrical spin operation via hyperfine mediated electron dipole spin resonance (EDSR). The development of all-electrical multi-donor dot qubits requires a full understanding of their EDSR and coherence properties, incorporating multi-valley nature of their ground state. Here, by introducing a variational effective mass wave-function, we examine the impact of qubit geometry and nearby charge defects on the electrical operation and coherence of $2P:1P$ qubits. We report four outcomes: (i) The difference in the hyperfine interaction between the $2P$ and $1P$ sites enables fast EDSR, with $T_π\sim 10-50$ ns and a Rabi ratio $ (T_1/T_π) \sim 10^6$. We analyse qubits with the $2P:1P$ axis aligned along the [100], [110] and [111] crystal axes, finding that the fastest EDSR time $T_π$ occurs when the $2P:1P$ axis is $\parallel$[111], while the best Rabi ratio occurs when it is $\parallel$ [100]. This difference is attributed to the difference in the wave function overlap between $2P$ and $1P$ for different geometries. In contrast, the choice of $2P$ axis has no visible impact on qubit operation. (ii) Sensitivity to random telegraph noise due to nearby charge defects depends strongly on the location of the nearby defects with respect to the qubit. For certain orientations of defects random telegraph noise has an appreciable effect both on detuning and $2P-1P$ tunneling, with the latter inducing gate errors. (iii) The qubit is robust against $1/f$ noise provided it is operated away from the charge anticrossing. (iv) Entanglement via exchange is several orders of magnitude faster than dipole-dipole coupling. These findings pave the way towards fast, low-power, coherent and scalable donor dot-based quantum computing.

cond-mat.mes-hall↗

arXiv2021

Non-adiabatic quantum control of valley states in silicon

Non-adiabatic quantum effects, often experimentally observed in semiconductors nano-devices such as single-electron pumps operating at high frequencies, can result in undesirable and uncontrollable behaviour. However, when combined with the valley degree of freedom inherent to silicon, these unfavourable effects may be leveraged for quantum information processing schemes. By using an explicit time evolution of the Schrodinger equation, we study numerically non-adiabatic transitions between the two lowest valley states of an electron in a quantum dot formed in a SiGe/Si heterostructure. The presence of a single atomic layer step at the top SiGe/Si interface opens an anti-crossing in the electronic spectrum as the centre of the quantum dot is varied. We show that an electric field applied perpendicularly to the interface allows tuning of the anti-crossing energy gap. As a result, by moving the electron through this anti-crossing, and by electrically varying the energy gap, it is possible to electrically control the probabilities of the two lowest valley states.

cond-mat.mes-hall↗