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arXiv · 1808.02268

Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells

T. Khouri·S. Pezzini·M. Bendias·P. Leubner·U. Zeitler·N. E. Hussey·H. Buhmann·L. W. Molenkamp·M. Titov·S. Wiedmann
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Abstract

In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a monotonically decreasing magnetoresistance is observed when a magnetic field up to order 10 T is applied parallel to the quantum well plane. This feature is accompanied by a vanishing of non-locality and is consistent with a predicted modification of the energy spectrum that becomes gapless at a critical in-plane field $B_{c}$. Magnetic fields in excess of $B_c$ allow us to investigate the evolution of the magnetoresistance in this field-induced semi-metallic region beyond the known regime. After an initial saturation phase in the presumably gapless phase, we observe a strong upturn of the longitudinal resistance. A small residual Hall signal picked up in non-local measurements suggests that this feature is likely a bulk phenomenon and caused by the semi-metallicity of the sample. Theoretical calculations indeed support that the origin of these features is classical and a power law upturn of the resistance can be expected due to the specifics of two-carrier transport in thin (semi-)metallic samples subjected to large magnetic fields.

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T. Khouri, S. Pezzini, M. Bendias, P. Leubner, U. Zeitler, N. E. Hussey, H. Buhmann, L. W. Molenkamp, M. Titov, S. Wiedmann. 2018-08-07. Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells. https://doi.org/10.1103/physrevb.99.075303

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