arXiv subjects

S. Pezzini

Publications and source records attributed to S. Pezzini.

13 recordsLinked to original sources

arXiv2022

Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes

Recently hBN has become an interesting platform for quantum optics due to the peculiar defect-related luminescence properties. Concomitantly, hBN was established as the ideal insulating support for realizing 2D materials device, where, on the contrary, defects can affect the device performance. In this work, we study the light emission properties of hBN flakes obtained by mechanical exfoliation with particular focus on extended defects generated in the process. In particular, we tackle different issues as the light emission in hBN flakes of different thicknesses in the range of hundreds of nm, revealing a higher concentration of deep level emission in thinner area of the flake. We recognize the effect of crystal deformation in some areas of the flake with an important blue-shift (130 meV) of the room temperature near band edge emission of hBN and the concurrent presence of a novel emission at 2.36 eV related to the formation of array of dislocations. We studied the light emission properties by means of cathodoluminescence and sub-bandgap excitation photoluminescence of thickness steps with different crystallographic orientations, revealing the presence of different concentration of radiative centers. CL mapping allows to detect buried thickness steps, invisible to the SEM and AFM morphological analysis.

cond-mat.mtrl-sci↗

arXiv2020

Determination of the Fermi surface and field-induced quasi-particle tunneling around the Dirac nodal-loop in ZrSiS

Unambiguous and complete determination of the Fermi surface is a primary step in understanding the electronic properties of topical metals and semi-metals, but only in a relatively few cases has this goal been realized. In this work, we present a systematic high-field quantum oscillation study up to 35 T on ZrSiS, a textbook example of a nodal-line semimetal with only linearly dispersive bands crossing the Fermi energy. The topology of the Fermi surface is determined with unprecedented precision and all pockets are identified by comparing the measured angle dependence of the quantum oscillations to density functional theory calculations. Comparison of the Shubnikov-de Haas and de Haas-van Alphen oscillations at low temperatures and analysis of the respective Dingle plots reveal the presence of significantly enhanced scattering on the electron pocket. Above a threshold field that is aligned along the c-axis of the crystal, the specific cage-like Fermi surface of ZrSiS allows for electron-hole tunneling to occur across finite gaps in momentum space leading to quantum oscillations with a complex frequency spectrum. Additional high-frequency quantum oscillations signify magnetic breakdown orbits that encircle the entire Dirac nodal loop. We suggest that the persistence of quantum oscillations in the resistivity to high temperatures is caused by Stark interference between orbits of nearly equal masses.

cond-mat.mes-hall↗

arXiv2019

Field-induced insulating states in a graphene superlattice

We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moiré modulation (15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in addition to the spin-valley antiferromagnet at nu = 0, two insulating states developing in positive and negative effective magnetic fields from the main nu = 1 and nu = -2 quantum Hall states respectively. We investigate the field dependence of the energy gaps associated with these insulating states, which we quantify from the temperature-activated peak resistance. Referring to a simple model of local Landau quantization of third generation Dirac fermions arising at Phi/Phi_0 = 1, we describe the different microscopic origins of the insulating states and experimentally determine the energy-momentum dispersion of the emergent gapped Dirac quasi-particles.

cond-mat.mes-hall↗

arXiv2018

Surface and bulk superconductivity at ambient pressure in the Weyl semimetal TaP

The motivation to search for signatures of superconductivity in Weyl semi-metals and other topological phases lies in their potential for hosting exotic phenomena such as nonzero-momentum pairing or the Majorana fermion, a viable candidate for the ultimate realization of a scalable quantum computer. Until now, however, all known reports of superconductivity in Weyl semimetals have arisen through surface contact with a sharp tip, focused ion-beam surface treatment or the application of high pressures. Here, we demonstrate the observation of superconductivity in single crystals, even an as-grown crystal, of the Weyl semi-metal tantalum phosphide (TaP), at ambient pressure. A superconducting transition temperature, $Tc$, varying between 1.7 and 5.3 K, is observed in different samples, both as-grown and microscopic samples processed with focused ion beam (FIB) etching. Our data show that the superconductivity present in the as-grown crystal is inhomogeneous yet exists in the bulk. For samples fabricated with FIB, we observe, in addition to the bulk superconductivity, a second superconducting state that resides on the sample surface. Through measurements of the characteristic fields as a function of temperature and angle, we are able to confirm the dimensionality of the two distinct superconducting phases.

cond-mat.supr-con↗

arXiv2018

Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells

In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a monotonically decreasing magnetoresistance is observed when a magnetic field up to order 10 T is applied parallel to the quantum well plane. This feature is accompanied by a vanishing of non-locality and is consistent with a predicted modification of the energy spectrum that becomes gapless at a critical in-plane field $B_{c}$. Magnetic fields in excess of $B_c$ allow us to investigate the evolution of the magnetoresistance in this field-induced semi-metallic region beyond the known regime. After an initial saturation phase in the presumably gapless phase, we observe a strong upturn of the longitudinal resistance. A small residual Hall signal picked up in non-local measurements suggests that this feature is likely a bulk phenomenon and caused by the semi-metallicity of the sample. Theoretical calculations indeed support that the origin of these features is classical and a power law upturn of the resistance can be expected due to the specifics of two-carrier transport in thin (semi-)metallic samples subjected to large magnetic fields.

cond-mat.mes-hall↗

arXiv2018

Electron-hole tunneling revealed by quantum oscillations in the nodal-line semimetal HfSiS

We report a study of quantum oscillations in the high-field magneto-resistance of the nodal-line semimetal HfSiS. In the presence of a magnetic field up to 31 T parallel to the c-axis, we observe quantum oscillations originating both from orbits of individual electron and hole pockets, and from magnetic breakdown between these pockets. In particular, we find an oscillation associated with a breakdown orbit enclosing one electron and one hole pocket in the form of a `figure of eight'. This observation represents an experimental confirmation of the momentum space analog of Klein tunneling. When the c-axis and the magnetic field are misaligned with respect to one another, this oscillation rapidly decreases in intensity. Finally, we extract the cyclotron masses from the temperature dependence of the oscillations, and find that the mass of the 'figure of eight' orbit corresponds to the sum of the individual pockets, consistent with theoretical predictions for Klein tunneling in topological semimetals.

cond-mat.mtrl-sci↗

arXiv2018

High-order fractal states in graphene superlattices

Graphene superlattices were shown to exhibit high-temperature quantum oscillations due to periodic emergence of delocalized Bloch states in high magnetic fields such that unit fractions of the flux quantum pierce a superlattice unit cell. Under these conditions, semiclassical electron trajectories become straight again, similar to the case of zero magnetic field. Here we report magnetotransport measurements that reveal second, third and fourth order magnetic Bloch states at high electron densities and temperatures above 100 K. The recurrence of these states creates a fractal pattern intimately related to the origin of Hofstadter butterflies. The hierarchy of the fractal states is determined by the width of magnetic minibands, in qualitative agreement with our band structure calculations.

cond-mat.mes-hall↗

arXiv2017

Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi$_2$Se$_3$ with high charge-carrier density

Topological insulators are ideally represented as having an insulating bulk with topologically protected, spin-textured surface states. However, it is increasingly becoming clear that these surface transport channels can be accompanied by a finite conducting bulk, as well as additional topologically trivial surface states. To investigate these parallel conduction transport channels, we studied Shubnikov-de Haas oscillations in Bi$_2$Se$_3$ thin films, in high magnetic fields up to 30 T so as to access channels with a lower mobility. We identify a clear Zeeman-split bulk contribution to the oscillations from a comparison between the charge-carrier densities extracted from the magnetoresistance and the oscillations. Furthermore, our analyses indicate the presence of a two-dimensional state and signatures of additional states the origin of which cannot be conclusively determined. Our findings underpin the necessity of theoretical studies on the origin of and the interplay between these parallel conduction channels for a careful analysis of the material's performance.

cond-mat.mes-hall↗

arXiv2017

Unconventional mass enhancement around the Dirac nodal loop in ZrSiS

The topological properties of fermions arise from their low-energy Dirac-like band dispersion and associated chiralities. Initially confined to points, extensions of the Dirac dispersion to lines and even loops have now been uncovered and semimetals hosting such features have been identified. However, experimental evidence for the enhanced correlation effects predicted to occur in these topological semimetals has been lacking. Here, we report a quantum oscillation study of the nodal loop semimetal ZrSiS in high magnetic fields that reveals significant enhancement in the effective mass of the quasiparticles residing near the nodal loop. Above a threshold field, magnetic breakdown occurs across gaps in the loop structure with orbits that enclose different windings around its vertices, each winding accompanied by an additional π-Berry phase. The amplitudes of these breakdown orbits exhibit an anomalous temperature dependence. These findings demonstrate the emergence of novel, correlation-driven physics in ZrSiS associated with the Dirac-like quasiparticles.

cond-mat.mes-hall↗

arXiv2016

High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 1,000 and 10,000 cm2/Vs at room and liquid-helium temperatures, respectively, allowing the observation of the fully-developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically-thin dichalcogenides and black phosphorus.

cond-mat.mes-hall↗

arXiv2016

Anisotropic and strong negative magneto-resistance in the three-dimensional topological insulator Bi2Se3

We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous presence of bulk and surface carriers. The magneto- resistance of Bi2Se3 is found to be highly anisotropic. In the presence of a parallel electric and magnetic field, we observe a strong negative longitudinal magneto-resistance that has been consid- ered as a smoking-gun for the presence of chiral fermions in a certain class of semi-metals due to the so-called axial anomaly. Its observation in a three-dimensional topological insulator implies that the axial anomaly may be in fact a far more generic phenomenon than originally thought.

cond-mat.mes-hall↗

arXiv2016

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.

cond-mat.mes-hall↗

arXiv2014

Critical point for the CAF-F phase transition at charge neutrality in bilayer graphene

We report on magneto-transport measurements up to 30 T performed on a bilayer graphene Hall bar, enclosed by two thin hexagonal boron nitride flakes. Our high mobility sample exhibits an insulating state at neutrality point which evolves into a metallic phase when a strong in-plane field is applied, as expected for a transition from a canted antiferromagnetic to a ferromagnetic spin ordered phase. For the first time we individuate a temperature-independent crossing in the four-terminal resistance as a function of the total magnetic field, corresponding to the critical point of the transition. We show that the critical field scales linearly with the perpendicular component of the field, as expected from the underlying competition between the Zeeman energy and interaction-induced anisotropies. A clear scaling of the resistance is also found and an universal behavior is proposed in the vicinity of the transition.

cond-mat.mes-hall↗