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arXiv · 1808.03378

Prediction of Extraordinary Magnetoresistance in Janus Monolayer MoTeB2

Shijun Yuan·Hui Ding·Jinlan Wang·Zhongfang Chen
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Abstract

Based on first-principles calculations, we studied the geometric configuration, stability and electronic structure of the two-dimensional Janus MoTeB2. The MoTeB2 monolayer is semimetal, and its attractive electronic structure reveals the perfect electron-hole compensation. Moreover, the electron-type and hole-type bands of the MoTeB2 monolayer are easily adjustable by external stain and charge doping, such as the switch of carrier polarity by charge doping, and the metal-semiconductor transition under tensile stain. These properties allow the MoTeB2 monolayer to be a controllable two-dimensional material with extraordinary large magnetoresistance in magnetic field.

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Shijun Yuan, Hui Ding, Jinlan Wang, Zhongfang Chen. 2018-08-10. Prediction of Extraordinary Magnetoresistance in Janus Monolayer MoTeB2. https://arxiv.org/abs/1808.03378

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