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Jinlan Wang

Publications and source records attributed to Jinlan Wang.

At least 19 recordsLinked to original sources

Multi-Source Domain Transfer Learning for Accurate Property Prediction in Two-Dimensional Materials

Machine learning has revolutionized materials discovery, but data scarcity remains a critical bottleneck for complex functional properties. As emerging systems, two-dimensional (2D) materials possess limited overall data volumes. Evaluating their diverse functional properties requires time-consuming simulations, hindering unified high-throughput screening. Furthermore, restrictions in known structural prototypes lead to highly fragmented data distributions. To address these challenges, we propose a multi-source domain transfer learning framework to extract generalizable and complementary knowledge from diverse crystalline systems. To mitigate data scarcity, the framework employs a shared feature extractor that integrates adversarial transfer learning with maximum mean discrepancy, mapping crystal structures into a domain-invariant latent space while preserving underlying physical correlations. To resolve distribution fragmentation, a sample-adaptive weighted ensemble strategy is subsequently utilized to dynamically aggregate predictions from multiple source domains. Relying solely on crystal structures, the framework predicts 2D carrier mobilities with an R2 score exceeding 0.90. The framework successfully screened 55 novel high-mobility 2D semiconductors, which were validated via first-principles electron-phonon coupling analysis, confirming their exceptional transport properties and stability. This work can potentially accelerate machine learning-assisted materials design and discovery with less data restriction.

cond-mat.mtrl-sci

Robust Flat Magnetoresistivity in D0$_3$-Fe$_3$Ga Driven by Chiral Anomaly

Topologically non-trivial nodes emerging from flat-band crossings not only enhance unconventional topological responses but also play a fundamental role in exploring correlation-driven topological physics. Here, we report the exceptionally robust chiral-anomaly-dominated transport in D0_3-Fe_3Ga. First, we observe a combination of positive and negative magnetoresistance, ideal planar longitudinal magnetoresistance (PLMR), and the planar Hall effect (PHE). Second, ultra-low-temperature resistivity exhibits pronounced non-Fermi-liquid (NFL) behavior, accompanied by the emergence of giant intrinsic anomalous Hall conductivity (AHC), in excellent agreement with our DFT calculations, which confirm the existence of tilted Weyl points arising from crossings of nearly three-dimensional (3D) flat bands. Most remarkably, we detect an exceptionally robust flat magnetoresistance (flat-MR) that persists without decay up to 33 T. This set of phenomena provides strong evidence that the Fermi level intersects the flattened Weyl crossings, offering confirmation of a topological flat-band semimetal. D0_3-Fe_3Ga presents a promising magnetic platform for quantum device innovations.

cond-mat.mtrl-sci

Ripple-assisted adsorption of noble gases on graphene at room temperature

Controllable gas adsorption is critical for both scientific and industrial fields, and high-capacity adsorption of gases on solid surfaces provides a significant promise due to its high-safety and low-energy consumption. However, the adsorption of nonpolar gases, particularly noble gases, poses a considerable challenge under atmospheric pressure and room temperature (RT). Here, we theoretically simulate and experimentally realize the stable adsorption of noble gases like xenon (Xe), krypton (Kr), argon (Ar), and helium (He) on highly rippled graphene at RT. The elemental characteristics of adsorbed Xe are confirmed by electron energy loss spectroscopy and X-ray photoelectron spectroscopy. The adsorbed gas atoms are crystalized with periodic arrangements. These adsorbed noble gases on graphene exhibit high stability at RT and can be completely desorbed at approximately 350 {\deg}C without damaging the intrinsic lattice of graphene. The structural and physical properties of graphene are significantly influenced by the adsorbed gas, and they fully recover after desorption. Additionally, this controllable adsorption could be generalized to other layered adsorbents such as NbSe2, MoS2 and carbon nanotubes. We anticipate that this ripple-assisted adsorption will not only re-define the theoretical framework of gas adsorption, but also accelerate advancements in gas storage and separation technologies, as well as enhance the applications in catalysis, surface modification, and other related fields.

cond-mat.mtrl-sci

Zero-field Anomalous Hall Effect in Bulk Single Crystal Mn3Ir

The L1_2-phase non-collinear antiferromagnet (AFM) Mn_3Ir has emerged as a pioneering platform for realizing the zero-field anomalous Hall effect (AHE), thereby catalyzing rapid advances in antiferromagnetic spintronics. Despite its significant potential, experimental investigations of the intrinsic magnetic and electronic properties of Mn_3Ir have been greatly hindered by the formidable challenges in growing bulk single crystals. Here, we report the growth of stoichiometric Mn_3Ir bulk single crystals and their characterization in terms of magnetization and the AHE. Using a high-throughput flux method, we obtained (111)-oriented hexagonal Mn_3Ir single crystals. A small AHE signal was detected, which we attribute to the coexistence of A- and B-type antiferromagnetic domains that mutually cancel the net AHE response. Our results reveal key aspects of the intrinsic magnetic properties and AHE in bulk Mn_3Ir, providing a critical material platform for the development of advanced spintronic devices.

cond-mat.mtrl-sci

Physics-grounded generative design of inherently stable, novel and controllable crystal structures

Generative inverse design is reshaping the discovery of functional crystalline materials. Yet current generative models face challenges in simultaneously achieving stability, novelty, and precise controllability in a single trained model. We address these challenges with a key physical insight: the diversity of crystals is governed by their crystallographic information (CI), namely composition, space group and lattice, whereas only a few stable atomic configurations remain once the CI is fixed. Built on this insight, we introduce SCGEN (stable and controllable crystal structure generation), a physics-grounded generative model with two components. A variational autoencoder samples diverse, physically plausible CI, and a symmetry- and Wyckoff-position-constrained optimizer locates stable atomic positions via universal machine-learning potentials. Benchmarked on roughly two million structures, SCGEN reaches state-of-the-art stability while preserving comparable novelty, and it satisfies any specified composition, space group, lattice or joint constraint with 100% success and no task-specific retraining. Applied to photocatalytic water splitting, property-guided optimization with SCGEN generates 200,000 candidate structures and identify top 22 stable, active and synthesizable photocatalysts. By decoupling CI generation from coordinate optimization, SCGEN establishes a physics-grounded inverse-design paradigm that yields synthesis-ready crystals on demand, rather than structures requiring post hoc repair, relaxation, or retraining.

cond-mat.mtrl-sci

LLM-Feynman: Leveraging Large Language Models for Universal Scientific Formula and Theory Discovery

Distilling underlying principles from data has historically driven scientific breakthroughs. However, conventional data-driven machine learning often produces complex models that lack interpretability and generalization due to insufficient domain expertise. Here, we present LLM-Feynman, a novel framework that leverages large language models (LLMs) alongside systematic optimization to derive concise, interpretable formulas from data and domain knowledge. Our method integrates automated feature engineering, LLM-guided symbolic regression with self-evaluation, and Monte Carlo tree search to enhance formula discovery and clarity. The embedding of domain knowledge simplifies the formula, while self-evaluation based on this knowledge further minimizes prediction errors, surpassing conventional symbolic regression in accuracy and interpretability. Our LLM-Feynman successfully rediscovered over 90% of fundamental physical formulas and demonstrated its efficacy in key materials science applications, including classification of two-dimensional material and perovskite synthesizability and determination of the Green's function and screened Coulomb interaction bandgaps, and prediction of ionic conductivity in lithium solid-state electrolytes. By transcending mere data fitting through the integration of deep domain knowledge, this LLM-Feynman offers a transformative paradigm for the automated discovery of generalizable scientific formulas and theories across disciplines.

cond-mat.mtrl-sci

T2MAT (text-to-materials): A universal agent for generating material structures with goal properties from a single sentence

Artificial Intelligence-Generated Content (AIGC)-content autonomously produced by AI systems without human intervention-has significantly boosted efficiency across various fields. However, AIGC in material science faces challenges in efficiently discovering novel materials that surpass existing databases, while simultaneously addressing the invariance and stability of crystal structures. To address these challenges, we develop T2MAT (text-to-material), a comprehensive agent processing from a user-input sentence to inverse design material structures with goal properties beyond the existing database via globally exploring chemical space, followed by an entirely automated workflow of first-principles validation. Furthermore, we propose CGTNet (Crystal Graph Transformer NETwork), a graph neural network model that captures long-range interactions, to enhance the accuracy and data utilization efficiency of property prediction and thereby strengthen the reliability of inverse design. Through these contributions, T2MAT minimizes the dependency on human expertise and significantly improves the efficiency of discovering novel, high-performance functional materials, offering a robust way toward more autonomous materials design.

cond-mat.mtrl-sci

Is Large Language Model All You Need to Predict the Synthesizability and Precursors of Crystal Structures?

Accessing the synthesizability of crystal structures is pivotal for advancing the practical application of theoretical material structures designed by machine learning or high-throughput screening. However, a significant gap exists between the actual synthesizability and thermodynamic or kinetic stability, which is commonly used for screening theoretical structures for experiments. To address this, we develop the Crystal Synthesis Large Language Models (CSLLM) framework, which includes three LLMs for predicting the synthesizability, synthesis methods, and precursors. We create a comprehensive synthesizability dataset including 140,120 crystal structures and develop an efficient text representation method for crystal structures to fine-tune the LLMs. The Synthesizability LLM achieves a remarkable 98.6% accuracy, significantly outperforming traditional synthesizability screening based on thermodynamic and kinetic stability by 106.1% and 44.5%, respectively. The Methods LLM achieves a classification accuracy of 91.02%, and the Precursors LLM has an 80.2% success rate in predicting synthesis precursors. Furthermore, we develop a user-friendly graphical interface that enables automatic predictions of synthesizability and precursors from uploaded crystal structure files. Through these contributions, CSLLM bridges the gap between theoretical material design and experimental synthesis, paving the way for the rapid discovery of novel and synthesizable functional materials.

cond-mat.mtrl-sci

Inverse Design of Promising Alloys for Electrocatalytic CO$_2$ Reduction via Generative Graph Neural Networks Combined with Bird Swarm Algorithm

Directly generating material structures with optimal properties is a long-standing goal in material design. One of the fundamental challenges lies in how to overcome the limitation of traditional generative models to efficiently explore the global chemical space rather than a small localized space. Herein, we develop a framework named MAGECS to address this dilemma, by integrating the bird swarm algorithm and supervised graph neural network to effectively navigate the generative model in the immense chemical space towards materials with target properties. As a demonstration, MAGECS is applied to design compelling alloy electrocatalysts for CO$_2$ reduction reaction (CO$_2$RR) and works extremely well. Specifically, the chemical space of CO$_2$RR is effectively explored, where over 250,000 promising structures with high activity have been generated and notably, the proportion of desired structures is 2.5-fold increased. Moreover, five predicted alloys, i.e., CuAl, AlPd, Sn$_2$Pd$_5$, Sn$_9$Pd$_7$, and CuAlSe$_2$ are successfully synthesized and characterized experimentally, two of which exhibit about 90% Faraday efficiency of CO$_2$RR, and CuAl achieved 76% efficiency for C$_2$ products. This pioneering application of inverse design in CO$_2$RR catalysis showcases the potential of MAGECS to dramatically accelerate the development of functional materials, paving the way for fully automated, artificial intelligence-driven material design.

cond-mat.mtrl-sci

Predicting the future applications of any stoichiometric inorganic material through learning from past literature

Through learning from past literature, artificial intelligence models have been able to predict the future applications of various stoichiometric inorganic materials in a variety of subfields of materials science. This capacity offers exciting opportunities for boosting the research and development (R&D) of new functional materials. Unfortunately, the previous models can only provide the prediction for existing materials in past literature, but cannot predict the applications of new materials. Here, we construct a model that can predict the applications of any stoichiometric inorganic material (regardless of whether it is a new material). Historical validation confirms the high reliability of our model. Key to our model is that it allows the generation of the word embedding of any stoichiometric inorganic material, which cannot be achieved by the previous models. This work constructs a powerful model, which can predict the future applications of any stoichiometric inorganic material using only a laptop, potentially revolutionizing the R&D paradigm for new functional materials

physics.app-ph

On the Uncertainty Estimates of Equivariant-Neural-Network-Ensembles Interatomic Potentials

Machine-learning (ML) interatomic potentials (IPs) trained on first-principles datasets are becoming increasingly popular since they promise to treat larger system sizes and longer time scales, compared to the {\em ab initio} techniques producing the training data. Estimating the accuracy of MLIPs and reliably detecting when predictions become inaccurate is key for enabling their unfailing usage. In this paper, we explore this aspect for a specific class of MLIPs, the equivariant-neural-network (ENN) IPs using the ensemble technique for quantifying their prediction uncertainties. We critically examine the robustness of uncertainties when the ENN ensemble IP (ENNE-IP) is applied to the realistic and physically relevant scenario of predicting local-minima structures in the configurational space. The ENNE-IP is trained on data for liquid silicon, created by density-functional theory (DFT) with the generalized gradient approximation (GGA) for the exchange-correlation functional. Then, the ensemble-derived uncertainties are compared with the actual errors (comparing the results of the ENNE-IP with those of the underlying DFT-GGA theory) for various test sets, including liquid silicon at different temperatures and out-of-training-domain data such as solid phases with and without point defects as well as surfaces. Our study reveals that the predicted uncertainties are generally overconfident and hold little quantitative predictive power for the actual errors.

cond-mat.mtrl-sci

Oxidation kinetics and non-Marcusian charge transfer in dimensionally confined semiconductors

Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substances can be well described by the classical Marcus-Gerischer charge transfer theory, the realistic reaction character and mechanism in dimensionally confined systems remain unknown. Here, we report the multiparametric survey on the kinetics of lateral photooxidation in structurally identical WS2 and MoS2 monolayers, where electrochemical oxidation occurs at the atomically thin monolayer edges. The oxidation rate is correlated quantitatively with various crystallographic and environmental parameters, including the density of reactive sites, humidity, temperature, and illumination fluence. In particular, we observe distinctive reaction barriers of 1.4 and 0.9 eV for the two structurally identical semiconductors and uncover an unusual non-Marcusian charge transfer mechanism in these dimensionally confined monolayers due to the limit in reactant supplies. A scenario of band bending is proposed to explain the discrepancy in reaction barriers. These results add important knowledge into the fundamental electrochemical reaction theory in low-dimensional systems.

cond-mat.mtrl-sci

Electron doping induced stable ferromagnetism in two-dimensional GdI_3 monolayer

As a two-dimensional material with a hollow hexatomic ring structure, Néel-type anti-ferromagnetic (AFM) GdI3 can be used as a theoretical model to study the effect of electron doping. Based on first-principles calculations, we find that the Fermi surface nesting occurs when more than 1/3 electron per Gd is doped, resulting in the failure to obtain a stable ferromagnetic (FM) state. More interestingly, GdI3 with appropriate Mg/Ca doping (1/6 Mg/Ca per Gd) turns to be half-metallic FM state. This AFM-FM transition results from the transfer of doped electrons to the spatially expanded Gd-5d orbital, which leads to the FM coupling of local half-full Gd-4f electrons through 5d-4f hybridization. Moreover, the shortened Gd-Gd length is the key to the formation of the stable ferromagnetic coupling. Our method provides new insights into obtaining stable FM materials from AFM materials.

cond-mat.mtrl-sci

A Gd@C82-based single molecular electret device with switchable electrical polarization

Single molecular electrets exhibiting single molecule electric polarization switching have been long desired as a platform for extremely small non-volatile storage devices, although it is controversial because of the poor stability of single molecular electric dipoles. Here we study the single molecular device of GdC82, where the encapsulated Gd atom forms a charge center, and we have observed a gate controlled switching behavior between two sets of single electron transport stability diagrams. The switching is operated in a hysteresis loop with a coercive gate field of around 0.5Vnm. Theoretical calculations have assigned the two conductance diagrams to corresponding energy levels of two states that the Gd atom is trapped at two different sites of the C82 cage, which possess two different permanent electrical dipole orientations. The two dipole states are stabilized by the anisotropic energy and separated by a transition energy barrier of 70 meV. Such switching is then accessed to the electric field driven reorientation of individual dipole while overcoming the barriers by the coercive gate field, and demonstrates the creation of a single molecular electret.

cond-mat.mes-hall

Defect Engineering for Modulating the Trap States in Two-dimensional Photoconductor

Defect induced trap states are essential in determining the performance of semiconductor photodetectors. The de-trap time of carriers from a deep trap could be prolonged by several orders of magnitude as compared to shallow trap, resulting in additional decay/response time of the device. Here, we demonstrate that the trap states in two-dimensional ReS2 could be efficiently modulated by defect engineering through molecule decoration. The deep traps that greatly prolong the response time could be mostly filled by Protoporphyrin (H2PP) molecules. At the same time, carrier recombination and shallow traps would in-turn play dominant roles in determining the decay time of the device, which can be several orders of magnitude faster than the as-prepared device. Moreover, the specific detectivity of the device is enhanced (as high as ~1.89 x 10^13 Jones) due to the significant reduction of dark current through charge transfer between ReS2 and molecules. Defect engineering of trap states therefore provides a solution to achieve photodetectors with both high responsivity and fast response.

cond-mat.mtrl-sci

Prediction of Extraordinary Magnetoresistance in Janus Monolayer MoTeB2

Based on first-principles calculations, we studied the geometric configuration, stability and electronic structure of the two-dimensional Janus MoTeB2. The MoTeB2 monolayer is semimetal, and its attractive electronic structure reveals the perfect electron-hole compensation. Moreover, the electron-type and hole-type bands of the MoTeB2 monolayer are easily adjustable by external stain and charge doping, such as the switch of carrier polarity by charge doping, and the metal-semiconductor transition under tensile stain. These properties allow the MoTeB2 monolayer to be a controllable two-dimensional material with extraordinary large magnetoresistance in magnetic field.

cond-mat.mtrl-sci

High Intrinsic Catalytic Activity of Two-Dimensional Boron Monolayers for Hydrogen Evolution Reaction

Two-dimensional (2D) boron monolayers have been successfully synthesized on silver substrate very recently. Their potential application is thus of great significance. In this work, we explore the possibility of boron monolayers (BMs) as electrocatalysts for hydrogen evolution reaction (HER) by first-principle method. Our calculations show that the BMs are active catalysts for HER with nearly zero free energy of hydrogen adsorption, metallic conductivity and plenty of active sites in the basal plane. The effect of the substrate on the HER activity is further assessed. It is found that the substrate has a positive effect on the HER performance caused by the competitive effect of mismatch strain and charge transfer. The indepth understanding of the structure dependent HER activity is also provided.

physics.chem-ph

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/Vs. The atomic dynamics is constructed by the combined study of the first-principle calculation, aberration-corrected transmission electron microscopy and Raman spectroscopy. Single/double Se vacancies are revealed originally, which cause some mid-gap impurity states and localize the device carriers. They are found repaired with the result of improved electronic transport. Such a picture is confirmed by a 1.5cm-1 red shift in the Raman spectra.

cond-mat.mes-hall