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arXiv · 1808.07587

On observation of dispersion in tunable second-order nonlinearities of silicon-rich nitride thin films

Hung-Hsi Lin·Rajat Sharma·Alex Friedman·Benjamin M. Cromey·Felipe Vallini·Matthew W. Puckett·Khanh Kieu·Yeshaiahu Fainman
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Abstract

We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich nitride (SRN) films. The as-deposited film presents a second-order nonlinear coefficient, or \c{hi}(2), as high as 8pm/V. This value can be widely tuned using the electric field induced second harmonic effect (EFISH), and a maximum value of 22.7pm/V was achieved with this technique. We further illustrate that the second-order nonlinear coefficient exhibited by these films can be highly dispersive in nature, and requires further study and analysis to evaluate their viability for in-waveguide applications at telecommunication wavelengths.

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Hung-Hsi Lin, Rajat Sharma, Alex Friedman, Benjamin M. Cromey, Felipe Vallini, Matthew W. Puckett, Khanh Kieu, Yeshaiahu Fainman. 2018-08-22. On observation of dispersion in tunable second-order nonlinearities of silicon-rich nitride thin films. https://arxiv.org/abs/1808.07587

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