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Hung-Hsi Lin

Publications and source records attributed to Hung-Hsi Lin.

6 recordsLinked to original sources

Reconfigurable On-chip Photoconductive Switches

Microwave photonics uses light to carry and process microwave signals over a photonic link. However, light can instead be used as a stimulus to microwave devices that directly control microwave signals. Such optically controlled amplitude and phase-shift switches are investigated for use in reconfigurable microwave systems, but they suffer from large footprint, high optical power level required for switching, lack of scalability and complex integration requirements, restricting their implementation in practical microwave systems. Here, we report Monolithic Optically Reconfigurable Integrated Microwave Switches (MORIMSs) built on a CMOS compatible silicon photonic chip that addresses all of the stringent requirements. Our scalable micrometer-scale switches provide higher switching efficiency and require optical power orders of magnitude lower than the state-of-the-art. Also, it opens a new research direction on silicon photonic platforms integrating microwave circuitry. This work has important implications in reconfigurable microwave and millimeter wave devices for future communication networks.

eess.SP

On observation of dispersion in tunable second-order nonlinearities of silicon-rich nitride thin films

We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich nitride (SRN) films. The as-deposited film presents a second-order nonlinear coefficient, or \c{hi}(2), as high as 8pm/V. This value can be widely tuned using the electric field induced second harmonic effect (EFISH), and a maximum value of 22.7pm/V was achieved with this technique. We further illustrate that the second-order nonlinear coefficient exhibited by these films can be highly dispersive in nature, and requires further study and analysis to evaluate their viability for in-waveguide applications at telecommunication wavelengths.

physics.optics

Electronic Metamaterials with Tunable Second-order Optical Nonlinearities

The ability to engineer metamaterials with tunable nonlinear optical properties is crucial for nonlinear optics. Traditionally, metals have been employed to enhance nonlinear optical interactions through field localization. Here, inspired by the electronic properties of materials, we introduce and demonstrate experimentally an asymmetric metal-semiconductor-metal (MSM) metamaterial that exhibits a large and electronically tunable effective second-order optical susceptibility (\c{hi}(2)). The induced \c{hi}(2) originates from the interaction between the third-order optical susceptibility of the semiconductor (\c{hi}(3)) with the engineered internal electric field resulting from the two metals with dissimilar work function at its interfaces. We demonstrate a five times larger second-harmonic intensity from the MSM metamaterial, compared to contributions from its constituents with electrically tunable nonlinear coefficient ranging from 2.8 to 15.6 pm/V.

physics.optics

Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlinearities

We present experimental results on the observation of a bulk second-order nonlinear susceptibility derived from both free-space and integrated measurements in silicon nitride. Phase-matching is achieved through dispersion engineering of the waveguide cross-section, independently revealing multiple components of the nonlinear susceptibility, namely X(2)yyy and X(2)xxy. Additionally, we show how the generated second-harmonic signal may be actively tuned through the application of bias voltages across silicon nitride. The nonlinear material properties measured here are anticipated to allow for the practical realization of new nanophotonic devices in CMOS-compatible silicon nitride waveguides, adding to their viability for telecommunication, data communication, and optical signal processing applications.

physics.optics

Capacitively-Induced Free-Carrier Effects in Nanoscale Silicon Waveguides for Electro-Optic Modulation

We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide, and by measuring the electro-optic behavior of ring resonators, we characterize the cladding-dependent and capacitively-induced free-carrier effects in each of these waveguides. By comparing our measured data with simulation results, we confirm that the observed voltage dependencies of the transmission spectra are due to changes in the concentrations of holes and electrons within the semiconductor waveguide, and we show for the first time how strongly these effects depend on the cladding material which comes into contact with the silicon waveguide. Additionally, the waveguide loss is found to have a particularly high sensitivity to the applied voltage, and may therefore find use in a wide range of applications which require low- or high-loss propagation. Collectively, these phenomena may be incorporated into more complex waveguide designs in the future to create high-efficiency electro-optic modulators.

physics.optics

Characterizing the effects of free carriers in fully-etched, dielectric-clad silicon waveguides

We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage (C-V) characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain (FDTD) method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively-driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

physics.optics