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arXiv · 1809.00119

Controlled Layer-by-Layer Oxidation of MoTe2 via O3 Exposure

Xiaoming Zheng·Yuehua Wei·Chuyun Deng·Han Huang·Yayun Yu·Guang Wang·Gang Peng·Zhihong Zhu·Yi Zhang·Tian Jiang·Shiqiao Qin·Renyan Zhang·Xueao Zhang
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Abstract

Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate TMDs into complementary metal oxide semiconductor (CMOS) logic circuits. Here, we report a layer-by-layer oxidation of atomically thin MoTe2 flakes via ozone (O3) exposure. The thickness of MoOx oxide film could be tuning with atomic-level accuracy simply by varying O3 exposure time. Additionally, MoOx-covered MoTe2 shows a hole-dominated transport behavior. Our findings point to a simple and effective strategy for growing homogenous surface oxide film on MoTe2, which is promising for several purposes in metal-oxide-semiconductor transistor, ranging from surface passivation to dielectric layers.

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Xiaoming Zheng, Yuehua Wei, Chuyun Deng, Han Huang, Yayun Yu, Guang Wang, Gang Peng, Zhihong Zhu, Yi Zhang, Tian Jiang, Shiqiao Qin, Renyan Zhang, Xueao Zhang. 2018-09-01. Controlled Layer-by-Layer Oxidation of MoTe2 via O3 Exposure. https://doi.org/10.1021/acsami.8b11003

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