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arXiv · 1809.01886

Narrow photoluminescence peak of epitaxial MoS$_2$ on graphene/Ir(111)

Niels Ehlen·Joshua Hall·Boris V. Senkovskiy·Martin Hell·Jun Li·d Alexander Herman·Dmitry Smirnov·Alexander Fedorov·Vladimir Yu. Voroshnin·Giovanni di Santo·Luca Petaccia·Thomas Michely·Alexander Grüneis
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Abstract

We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS$_2$ on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS$_2$ interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS$_2$ with the graphene is highlighted by angle-resolved photoemission spectroscopy and temperature dependent Raman spectroscopy. These methods reveal that there is no hybridization between electronic states of graphene and MoS$_2$ and a different thermal expansion of graphene and MoS$_2$. Molecular beam epitaxy grown MoS2 on graphene is therefore an important platform for optoelectronics which allows for large area growth with controlled properties.

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Niels Ehlen, Joshua Hall, Boris V. Senkovskiy, Martin Hell, Jun Li, d Alexander Herman, Dmitry Smirnov, Alexander Fedorov, Vladimir Yu. Voroshnin, Giovanni di Santo, Luca Petaccia, Thomas Michely, Alexander Grüneis. 2018-09-06. Narrow photoluminescence peak of epitaxial MoS$_2$ on graphene/Ir(111). https://doi.org/10.1088/2053-1583%2Faaebd3

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