SearcharxivSearch

arXiv subjects

Dmitry Smirnov

Publications and source records attributed to Dmitry Smirnov.

At least 19 recordsLinked to original sources

Revealing Intrinsic Anisotropy of Collective Magnetic Excitations in Twinned Crystals of a Kitaev-Heisenberg Quantum Magnet

Quantum magnets with competing interactions often emerge from delicate balances among microscopic parameters, making it essential to disentangle intrinsic spin dynamics from extrinsic disorder effects. Here, we introduce a multimodal optical approach combining magneto-infrared spectroscopy with domain-resolved micro-Raman spectroscopy at high magnetic fields to reconstruct the intrinsic magnetic excitation spectrum of twinned crystals of the Kitaev-Heisenberg quantum magnet Na$_3$Co$_2$SbO$_6$. Far-infrared spectroscopy reveals multiple field-tunable magnetic excitations, but the intrinsic response is obscured by replica features arising from twin domains. By correlating magneto-infrared and domain-resolved Raman spectra, we isolate the single-domain magnon response and uncover a pronounced twofold in-plane magnon anisotropy. This anisotropy far exceeds that expected from the measured in-plane g-factor anisotropy and is instead dominated by anisotropic bond-dependent exchange interactions. By unifying high-field, high-resolution and spatially selective optical probes, our work establishes a broadly applicable framework for revealing intrinsic spin dynamics and constraining the spin Hamiltonian in multidomain quantum magnets.

cond-mat.mtrl-sci

Flat-Band Generation in InAs/GaSb Quantum Wells through Vertically Engineered Heterostructures

Quantum materials constitute a novel category of substances wherein quantum effects and electron-electron (e-e) interactions give rise to unforeseen phenomena on a macroscopic scale. Of particular interest within the realm of quantum materials are flat bands, which promote heavy conduction electrons and enhance e-e correlation effects. While the engineering of such flat bands has been demonstrated in graphene and two-dimensional transition metal dichalcogenides moir\'e superlattices and in lithography defined semiconductor moir\'e superlattices, conventional tear-and-stack fabrication methods face challenges due to inevitable twist-angle disorder, strain, and relaxation effects, leading to issues with reproducibility and scalability. Here, we explore the creation and modification of flat bands through vertically engineered III-V semiconductor heterostructures, without the need for twisting. These artificial quantum materials offer a reproducible and scalable means for producing high-quality flat-band materials via molecular beam epitaxy growth. Our investigation includes magnetotransport and infrared magneto-spectroscopy studies of quad-layer InAs/GaSb quantum wells, accompanied by k*p band structure calculations, which illustrate the flattening of bands in vertically designed heterostructures.

cond-mat.mes-hall

Field-induced magnetic phase transition driven by a ground state level-crossing in CsErSe$_2$

We report a comprehensive study of the low-temperature magnetic properties of the insulating rare-earth triangular magnet CsErSe$_2$. We uncover a field-induced level crossing at the crystal electric field (CEF) ground state, which gives rise to a first order phase transition as well as to distinctive magnetic properties. This crossing is identified by the accurate determination of the single-ion Hamiltonian, the reliability of which is substantially enhanced by field-dependent optical spectroscopy that directly tracks the Zeeman splittings of Kramers doublets. We also observe spontaneous antiferromagnetic ordering in CsErSe$_2$ below $T_N \approx 110$ mK, and resolve the corresponding magnetic structure using elastic neutron scattering. We discuss how the rich magnetic behavior of CsErSe$_2$ arises from the interplay of non-trivial field-dependent single-ion physics and spontaneous ordering, and highlight the implications of these results for understanding magnetic phenomena across a wide range of insulating rare-earth magnets.

cond-mat.str-el

Terahertz field-induced giant symmetry modulations in a van der Waals antiferromagnet

Strong-field terahertz (THz) excitations enable dynamic control over electronic, lattice and symmetry degrees of freedom in quantum materials. Here, we uncover pronounced terahertz-induced symmetry modulations and coherent phonon dynamics in the van der Waals antiferromagnet MnPS3, in which inversion symmetry is broken by its antiferromagnetic spin configuration. Time-resolved second harmonic generation measurements reveal long-lived giant oscillations in the antiferromagnetic phase, with amplitudes comparable to the equilibrium signal, driven by phonons involving percent-level atomic displacements relative to the equilibrium bond lengths. The temporal evolution of the rotational anisotropy patterns indicate a dynamic breaking of mirror symmetry, modulated by two vibrational modes at 1.7 THz and 4.5 THz, with the former corresponding to a hidden mode not observed in equilibrium spectroscopy. We show that these effects arise in part from a field-induced charge rearrangement mechanism that lowers the local crystal symmetry, and couples to the phonon modes. A long-lived field-driven response was uncovered with a complex THz polarization dependence which, in comparison to theory, indicates evidence for an antiferromagnetic-to-ferrimagnetic transition. Our results establish an effective field-tunable pathway for driving excitations otherwise weak in equilibrium, and for manipulating magnetism in low-dimensional materials via dynamical modulation of symmetry.

cond-mat.str-el

Sharp spectroscopic fingerprints of disorder in an incompressible magnetic state

Disorder significantly impacts the electronic properties of conducting quantum materials by inducing electron localization and thus altering the local density of states and electric transport. In insulating quantum magnetic materials, the effects of disorder are less understood and can drastically impact fluctuating spin states like quantum spin liquids. In the absence of transport tools, disorder is typically characterized using chemical methods or by semi-classical modeling of spin dynamics. This requires high magnetic fields that may not always be accessible. Here, we show that magnetization plateaus -- incompressible states found in many quantum magnets -- provide an exquisite platform to uncover small amounts of disorder, regardless of the origin of the plateau. Using optical magneto-spectroscopy on the Ising-Heisenberg triangular-lattice antiferromagnet K$_2$Co(SeO$_3$)$_2$ exhibiting a 1/3 magnetization plateau, we identify sharp spectroscopic lines, the fine structure of which serves as a hallmark signature of disorder. Through analytical and numerical modeling, we show that these fingerprints not only enable us to quantify minute amounts of disorder but also reveal its nature -- as dilute vacancies. Remarkably, this model explains all details of the thermomagnetic response of our system, including the existence of multiple plateaus. Our findings provide a new approach to identifying disorder in quantum magnets.

cond-mat.mtrl-sci

Lithography defined semiconductor moires with anomalous in-gap quantum Hall states

Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography defined semiconductor moires superlattices, in which three fundamental parameters, electron-electron interaction, spin-orbit coupling, and band topology, are designable. We experimentally investigate quantum transport properties in a moire specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum information and microelectronics technologies.

cond-mat.mes-hall

Mechanical resonant sensing of spin texture dynamics in a two-dimensional antiferromagnet

The coupling between the spin degrees of freedom and macroscopic mechanical motions, including striction, shearing, and rotation, has attracted wide interest with applications in actuation, transduction, and information processing. Experiments so far have established the mechanical responses to the long-range ordered or isolated single spin states. However, it remains elusive whether mechanical motions can couple to a different type of magnetic structure, the non-collinear spin textures, which exhibit nanoscale spatial variations of spin (domain walls, skyrmions, etc.) and are promising candidates to realize high-speed computing devices. Here, we report the detection of collective spin texture dynamics with nanoelectromechanical resonators made of two-dimensional antiferromagnetic (AFM) MnPS3 with $10^{-9}$ strain sensitivity. By examining radio frequency mechanical oscillations under magnetic fields, new magnetic transitions were identified with sharp dips in resonant frequency. They are attributed to the collective AFM domain wall motions as supported by the analytical modeling of magnetostriction and large-scale spin-dynamics simulations. Additionally, an abnormally large modulation in the mechanical nonlinearity at the transition field infers a fluid-like response due to the ultrafast domain motion. Our work establishes a strong coupling between spin texture and mechanical dynamics, laying the foundation for electromechanical manipulation of spin texture and developing quantum hybrid devices.

cond-mat.mes-hall

Light-Induced Electron Pairing in a Bilayer Structure

Previous experimental and theoretical work has given evidence of the existence of doubly charged exciton states in strongly screened bilayers of transition metal dichalcogenide (TMD) layers. These complexes are important because they are performed electron pairs that can, in principle, undergo Bose-Einstein condensation (BEC), in which case they would also form a new type of superconductor, consisting of stable bosons with net charges. In this paper, we present key electrostatic and magnetic measurements that definitively confirm the existence of these charged bosons. These measurements include 1) continuous control of the doping density with both positive and negative carriers, showing the expected population dependencies on the free carrier density, and 2) measurement of the dependence on the magnetic field, showing that this new bound state is a spin triplet. These results imply that it is promising to look for BEC and superconductivity in this system.

cond-mat.supr-con

Magneto-optical evidence of tilting effect in coupled Weyl bands

Theories have revealed the universality of the band tilting effect in topological Weyl semimetals (WSMs) and its implications for the material's physical properties. However, the experimental identification of tilted Weyl bands remains much less explored. Here, by combining magneto-infrared optical studies with a four-band coupled Weyl point model, we report spectroscopic evidence of the tilting effect in the well-established WSM niobium phosphide. Specifically, we observe Landau level transitions with rich features that are well reproduced within a model of coupled tilted Weyl points. Our analysis indicates that the tilting effect relaxes the selection rules and gives rise to transitions that would otherwise be forbidden in the non-tilt case. Additionally, we observe unconventional interband transitions with flat and negative magnetic field dispersions, highlighting the importance of coupling between Weyl points. Our results not only emphasize the significance of the tilting effect in the optical responses of WSMs but also demonstrate magneto-optics as an effective tool for probing the tilting effect in electronic band structures.

cond-mat.mtrl-sci

Exciton-activated effective phonon magnetic moment in monolayer MoS2

Optical excitation of chiral phonons plays a vital role in studying the phonon-driven magnetic phenomena in solids. Transition metal dichalcogenides host chiral phonons at high symmetry points of the Brillouin zone, providing an ideal platform to explore the interplay between chiral phonons and valley degree of freedom. Here, we investigate the helicity-resolved magneto-Raman response of monolayer MoS2 and identify a doubly degenerate Brillouin-zone-center chiral phonon mode at ~270 cm-1. Our wavelength- and temperature-dependent measurements show that this chiral phonon is activated through the resonant excitation of A exciton. Under an out-of-plane magnetic field, the chiral phonon exhibits giant Zeeman splitting, which corresponds to an effective magnetic moment of ~2.5mu_B. Moreover, we carry out theoretical calculations based on the morphic effects in nonmagnetic crystals, which reproduce the linear Zeeman splitting and Raman cross-section of the chiral phonon. Our study provides important insights into lifting the chiral phonon degeneracy in an achiral covalent material, paving a new route to excite and control chiral phonons.

cond-mat.mtrl-sci

Comparative Raman Scattering Study of Crystal Field Excitations in Co-based Quantum Magnets

Co-based materials have recently been explored due to potential to realise complex bond-dependent anisotropic magnetism. Prominent examples include Na$_2$Co$_2$TeO$_6$, BaCo$_2$(AsO$_4$)$_2$, Na$_2$BaCo(PO$_4$)$_2$, and CoX$_2$ (X = Cl, Br, I). In order to provide insight into the magnetic interactions in these compounds, we make a comparative analysis of their local crystal electric field excitations spectra via Raman scattering measurements. Combining these measurements with theoretical analysis confirms the validity of $j_{\rm eff} = 1/2$ single-ion ground states for all compounds, and provides accurate experimental estimates of the local crystal distortions, which play a prominent role in the magnetic couplings between spin-orbital coupled Co moments.

cond-mat.str-el

Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells

A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the inter-subband transitions have wide technological applications such as optical modulators and quantum cascade lasers. In conventional materials, however, the tunability of intersubband spacing is limited. Here we demonstrate electrostatic population and characterization of the second subband in few-layer InSe quantum wells, with giant tunability of its energy, population, and spin-orbit coupling strength, via the control of not only layer thickness but also out-of-plane displacement field. A modulation of as much as 350% or over 250 meV is achievable, underscoring the promise of InSe for tunable infrared and THz sources, detectors and modulators.

cond-mat.mes-hall

Dominant 1/3-filling Correlated Insulator States and Orbital Geometric Frustration in Twisted Bilayer Graphene

Geometric frustration is a phenomenon in a lattice system where not all interactions can be satisfied, the simplest example being antiferromagnetically coupled spins on a triangular lattice. Frustrated systems are characterized by their many nearly degenerate ground states, leading to non-trivial phases such as spin ice and spin liquids. To date most studies are on geometric frustration of spins; much less explored is orbital geometric frustration. For electrons in twisted bilayer graphene (tBLG) at denominator 3 fractional filling, Coulomb interactions and the Wannier orbital shapes are predicted to strongly constrain spatial charge ordering, leading to geometrically frustrated ground states that produce a new class of correlated insulators (CIs). Here we report the observation of dominant denominator 3 fractional filling insulating states in large angle tBLG; these states persist in magnetic fields and display magnetic ordering signatures and tripled unit cell reconstruction. These results are in agreement with a strong-coupling theory of symmetry-breaking of geometrically frustrated fractional states.

cond-mat.str-el

In-situ Synchrotron X-Ray Photoelectron Spectroscopy Study of Medium-Temperature Baking of Niobium for SRF Application

In the present work the chemical composition of niobium surface upon 200-400 {\deg}C baking similar to "medium-temperature baking" and "furnace baking" of cavities is explored in-situ by synchrotron X-ray photoelectron spectroscopy (XPS). Our findings imply that below the critical thickness of $Nb_2O_5$ layer (about 1 nm) niobium starts to interact actively with surface impurities, such as carbon and phosphorus. By studying the kinetics of the native oxide reduction, the activation energy and the rate-constant relation have been determined and used for the calculation of the oxygen-concentration depth profiles. It has been established that the controlled diffusion of oxygen when the native-oxide layer represents an oxygen source is realized at temperatures 200-300 {\deg}C, while at 400 {\deg}C the pentoxide is completely reduced and the doping level is determined by an ambient oxygen partial pressure. Fluorine (F to Nb atomic ratio is about 0.2) after the buffered chemical polishing was found to be incorporated into the surface layer probed by XPS (about 4.6 nm), and its concentration increased during the low-temperature baking (F/Nb up to 0.35 at 230 {\deg}C) and depleted at higher temperatures (F/Nb=0.11 at 400 {\deg}C). Thus, the influence of fluorine on the performance of mid-T baked, mild-baked (120 {\deg}C/48 h) and nitrogen-doped cavities must be considered. The possible role of fluorine in the educed $Nb^{+5}$ to $Nb^{+4}$ reaction under the impact of an X-ray beam at room temperature and during the thermal treatment is also discussed. The range of temperature and duration parameters of the thermal treatment at which the niobium surface would not be contaminated with impurities is determined for industrial applications.

physics.acc-ph

Semi-Dirac Fermions in a Topological Metal

Topological semimetals with massless Dirac and Weyl fermions represent the forefront of quantum materials research. In two dimensions (2D), a peculiar class of fermions that are massless in one direction and massive in the perpendicular direction was predicted sixteen years ago. These highly exotic quasiparticles - the semi-Dirac fermions - ignited intense theoretical and experimental interest but remain undetected. Using magneto-optical spectroscopy, we demonstrate the defining feature of semi-Dirac fermions - $B^{2/3}$ scaling of Landau levels - in a prototypical nodal-line metal ZrSiS. In topological metals, including ZrSiS, nodal-lines extend the band degeneracies from isolated points to lines, loops or even chains in the momentum space. With $\textit{ab initio}$ calculations and theoretical modeling, we pinpoint the observed semi-Dirac spectrum to the crossing points of nodal-lines in ZrSiS. Crossing nodal-lines exhibit a continuum absorption spectrum but with singularities that scale as $B^{2/3}$ at the crossing. Our work sheds light on the hidden quasiparticles emerging from the intricate topology of crossing nodal-lines and highlights the potential to explore quantum geometry with linear optical responses.

cond-mat.mtrl-sci

Quantum Octets in Air Stable High Mobility Two-Dimensional PdSe2

Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large-scale synthesis. Here we demonstrate air-stable field-effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with record high saturation current >350μA/μm, and field effect mobilities 700 and 10,000 cm2/Vs at 300K and 2K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.

cond-mat.mtrl-sci

Energy gap of topological surface states in proximity to a magnetic insulator

Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb1-xSnxSe/EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level.

cond-mat.mes-hall

$g$-factor engineering with InAsSb alloys toward zero band gap limit

Band gap is known as an effective parameter for tuning the Lande $g$-factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large $g$-factor of $g\approx -90$ at the minimum band gap of $\sim 0.1$ eV, which is almost twice that in bulk InSb is found. Further analysis to the zero gap limit reveals a possible gigantic $g$-factor of $g\approx -200$ with a peculiar relativistic Zeeman effect that disperses as the square root of magnetic field. Such a $g$-factor enhancement toward the narrow gap limit cannot be quantitatively described by the conventional Roth formula, as the orbital interaction effect between the nearly triply degenerated bands becomes the dominant source for the Zeeman splitting. These results may provide new insights into realizing large $g$-factors and spin polarized states in semiconductors and topological materials.

cond-mat.mtrl-sci