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arXiv · 1809.08520

State-of-the-Art Flash Chips for Dosimetry Applications

Preeti Kumari·Levi Davies·Narayana P. Bhat·En Xia Zhang·Michael W. McCurdy·Daniel M. Fleetwood·Biswajit Ray
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Abstract

In this paper we show that state-of-the-art commercial off-the-shelf Flash memory chip technology (20 nm technology node with multi-level cells) is quite sensitive to ionizing radiation. We find that the fail-bit count in these Flash chips starts to increase monotonically with gamma or X-ray dose at 100 rad(SiO2). Significantly more fail bits are observed in X-ray irradiated devices, most likely due to dose enhancement effects due to high-Z back-end-of-line materials. These results show promise for dosimetry application.

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Preeti Kumari, Levi Davies, Narayana P. Bhat, En Xia Zhang, Michael W. McCurdy, Daniel M. Fleetwood, Biswajit Ray. 2018-09-23. State-of-the-Art Flash Chips for Dosimetry Applications. https://arxiv.org/abs/1809.08520

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