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arXiv · 1810.00100

Robust operation of a GaAs tunable barrier electron pump

S. P. Giblin·M. -H. Bae·N. Kim·Ye-Hwan Ahn·M. Kataoka
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Abstract

We demonstrate the robust operation of a gallium arsenide tunable-barrier single-electron pump operating with 1 part-per-million accuracy at a temperature of $1.3$~K and a pumping frequency of $500$~MHz. The accuracy of current quantisation is investigated as a function of multiple control parameters, and robust plateaus are seen as a function of three control gate voltages and RF drive power. The electron capture is found to be in the decay-cascade, rather than the thermally-broadened regime. The observation of robust plateaus at an elevated temperature which does not require expensive refrigeration is an important step towards validating tunable-barrier pumps as practical current standards.

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S. P. Giblin, M. -H. Bae, N. Kim, Ye-Hwan Ahn, M. Kataoka. 2018-09-28. Robust operation of a GaAs tunable barrier electron pump. https://doi.org/10.1088/1681-7575%2Faa634c

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