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arXiv · 1810.01952

Gate defined quantum dot realized in a single crystalline InSb nanosheet

Jianhong Xue·Yuanjie Chen·Dong Pan·Ji-Yin Wang·Jianhua Zhao·Shaoyun Huang·H. Q. Xu
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Abstract

Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate and the quantum dot confinement is achieved by top gate technique. Transport measurements show a series of Coulomb diamonds, demonstrating that the quantum dot is well defined and highly tunable. Tunable, gate-defined, planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.

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Jianhong Xue, Yuanjie Chen, Dong Pan, Ji-Yin Wang, Jianhua Zhao, Shaoyun Huang, H. Q. Xu. 2018-10-03. Gate defined quantum dot realized in a single crystalline InSb nanosheet. https://doi.org/10.1063/1.5064368

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