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arXiv · 1810.03838

Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier

Muftah Al-Mahdawi·Mohamed Belmoubarik·Masao Obata·Daiki Yoshikawa·Hideyuki Sato·Tomohiro Nozaki·Tatsuki Oda·Masashi Sahashi
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Abstract

The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolatile control of magnetic anisotropy in ferromagnetic/ferroelectric CoPt/ZnO interface. Using the switched electric polarization of ZnO, the density-of-states and magnetic anisotropy at the CoPt surface show a large change. Due to a strong Co/Pt orbitals hybridization and a large spin-orbit coupling, a large control of magnetic anisotropy was found. We experimentally measured the change of effective anisotropy by tunneling resistance measurements in CoPt/Mg-doped ZnO/Co junctions. Additionally, we corroborate the origin of the control of magnetic anisotropy by observations on tunneling anisotropic magnetoresistance.

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Muftah Al-Mahdawi, Mohamed Belmoubarik, Masao Obata, Daiki Yoshikawa, Hideyuki Sato, Tomohiro Nozaki, Tatsuki Oda, Masashi Sahashi. 2018-10-09. Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier. https://doi.org/10.1103/physrevb.100.054423

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