Coulomb pairing of electrons in thin films with strong spin-orbit interaction

Yasha Gindikin; Vladimir A. Sablikov

doi:10.1016/j.physe.2018.12.028

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arXiv · 1810.05144

Coulomb pairing of electrons in thin films with strong spin-orbit interaction

Yasha Gindikin·Vladimir A. Sablikov

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Abstract

In low-dimensional structures with strong Rashba spin-orbit interaction (SOI), the Coulomb fields between moving electrons produce a SOI component of the pair interaction that competes with the potential Coulomb repulsion. If the Rashba SOI constant of the material is sufficiently high, the total electron-electron interaction becomes attractive, which leads to the formation of the two-electron bound states. We show that because of the dielectric screening in a thin film the binding energy is significantly higher as compared to the case of the bulk screening.

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Yasha Gindikin, Vladimir A. Sablikov. 2018-11-26. Coulomb pairing of electrons in thin films with strong spin-orbit interaction. https://doi.org/10.1016/j.physe.2018.12.028

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