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arXiv · 1810.06878

Induced spin-orbit coupling in silicon thin films by bismuth doping

F. Rortais·S. Lee·R. Ohshima·S. Dushenko·Y. Ando·M. Shiraishi
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Abstract

We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by doping with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi doping changes magnetoconductance from weak localization to the crossover between weak localization and weak antilocalization. The elastic diffusion length, phase coherence length and spin-orbit coupling length in Si with and without Bi implantation are estimated, and the spin-orbit coupling length after the Bi doping becomes the same order of magnitude (Lso = 54 nm) with the phase coherence length (L{\phi} = 35 nm) at 2 K. This is an experimental proof that the spin-orbit coupling strength in Si thin film is tunable by doping with heavy metals.

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F. Rortais, S. Lee, R. Ohshima, S. Dushenko, Y. Ando, M. Shiraishi. 2018-10-16. Induced spin-orbit coupling in silicon thin films by bismuth doping. https://doi.org/10.1063/1.5046781

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