arXiv subjects

Y. Ando

Publications and source records attributed to Y. Ando.

At least 19 recordsLinked to original sources

arXiv2026

Temperature dependence of charge-to-spin conversion in rhombohedral (110) bismuth thin film

The amplitude of charge-to-spin conversion, namely the spin Hall effect (SHE), in bismuth (Bi) strongly depends on its crystal orientation. The conversion efficiency at room temperature in rhombohedral (110) bismuth is notably large as expected from its large spin-orbit interaction, and such a large SHE is ascribed to the large effective g-factor in bismuth [N. Fukumoto et al., Proc. Nat. Acad. Sci. 120, e2215030120 (2023)]. Despite the successful observation of the large conversion efficiency, a more detailed physical mechanism of the SHE in (110) bismuth is still elusive and under debate. In this work, we investigate the temperature dependence of charge-to-spin conversion in an epitaxial Bi(110)/Ni bilayer system using the second harmonic Hall method, revealing that both spin Hall conductivity and spin diffusion length augment with decreasing temperature. This finding suggests that spin scattering in (110) bismuth is dominated by the Elliott-Yafet mechanism, and the charge-to-spin conversion is mainly attributed to skew scattering.

cond-mat.mtrl-sci↗

arXiv2025

Potentiometric detection of spin polarization expected at the surface of FeTe0.6Se0.4 in the effective p-wave superconducting state

Nowadays, the quest for non-Abelian anyons is attracting tremendous attention. In particular, a Majorana quasiparticle has attracted great interest since the non-Abelian anyon is a key particle for topological quantum computation. Much effort has been paid for the quest of the Majorana state in solids, and some candidate material platforms are reported. Among various materials that can host the Majorana state, chiral p-wave superconductor is one of the suitable materials and the iron-based layered superconductor FeTeSe is one of the promising material platforms because its surface can host effective p-wave superconducting state that is analogous to chiral p-wave superconducting state thanks to its topological surface state. Given that a chiral p-wave superconductor possesses spin polarization, detecting the spin polarization can be evidence for the chiral p-wave trait, which results in the existence of Majorana excitation. Here, we show successful detection of the spin polarization at the surface of FeTe0.6Se0.4 in its superconducting state, where the spin polarization is detected via a potentiometric method. Amplitudes of the spin signal exhibit characteristic dependence for temperature and bias current, suggesting detection of spin polarization of the Bogoliubov quasiparticles. Our achievement opens a new avenue to explore topological superconductivity for fault-tolerant quantum computation.

cond-mat.mtrl-sci↗

arXiv2025

Observation of Orbital Hall Effect in Si

Controlling/storing information carriers, such as electron charge and spin, is key for modern information society, and significant efforts have been paid made to establish novel technologies at the nanoscale. The rise of Si-based semiconductor technology and magnetism-based technology has been motivated by the aforementioned demands. However, both technologies have been individually developed, with little effort in fusing them. Hence, establishing a technology to bridge semiconductor and magnetism-based technologies that would allow realization of a novel information device is strongly awaited. In line with this research strategy, the creation of a magnetic device using semiconductors would enable fundamental innovation. Here, we show that a mother material for modern electronics, Si, gives rise to a room-temperature orbital Hall effect (OHE), enabling the creation of novel energy-efficient magnetic memory via efficient torque generation. The orbital torque efficiency {\xi}JDL of Si largely exceeds that of the archetypal metallic materials used in the OHE. Our achievement overturns the conventional understanding that nonmagnetic semiconductors cannot play a pivotal role in magnetic devices and paves a new avenue for creating novel information devices through the fusion of semiconductor and magnetism-based technologies.

cond-mat.mtrl-sci↗

arXiv2023

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2 make it efficient material for spintronics, optoelectronics and valleytronics applications. In this work, we report electrical transport properties of monolayer WSe2 based field effect transistor with most needed multilayer Co/Pt ferromagnetic electrodes exhibiting perpendicular magnetic anisotropy. We studied contacts behaviour by performing I-V curve measurements and estimating Schottky barrier heights (SBHs). SBHs estimated from experimental data are found to be comparatively small, without using any tunnel barrier. This work expands the current understanding of WSe2 based devices and gives insight into the electrical behaviour of Co/Pt metal contacts, which can open great possibilities for spintronic/valleytronic applications.

cond-mat.mtrl-sci↗

arXiv2023

Ferroic Berry Curvature Dipole in a Topological Crystalline Insulator at Room Temperature

The physics related to Berry curvature is now a central research topic in condensed matter physics. The Berry curvature dipole (BCD) is a significant and intriguing condensed matter phenomenon that involves inversion symmetry breaking. However, the creation and controllability of BCDs have so far been limited to far below room temperature (RT) and non-volatile (i.e., ferroic) BCDs have not yet been discovered, hindering further progress in topological physics. In this work, we demonstrate a switchable and non-volatile BCD effect at RT in a topological crystalline insulator, Pb1-xSnxTe (PST), which is attributed to ferroic distortion. Surprisingly, the magnitude of the ferroic BCD is several orders of magnitude greater than that of the non-ferroic BCDs that appear, for example, in transition metal dichalcogenides. The discovery of this ferroic and extraordinarily large BCD in PST could pave the way for further progress in topological material science and the engineering of novel topological devices.

cond-mat.mes-hall↗

arXiv2021

Giant spin Hall angle in the Heusler alloy Weyl ferromagnet Co$_2$MnGa

Weyl semimetals are playing a major role in condensed matter physics due to exotic topological properties, and their coexistence with ferromagnetism may lead to enhanced spin-related phenomena. Here, the inverse spin Hall effect (ISHE) in the ferromagnetic Weyl-semimetal Heusler alloy Co$_2$MnGa was investigated at room temperature by means of electrical spin injection in lateral spin valve structures. Spin transport properties such as spin polarization and spin diffusion length in this material were precisely extracted in order to estimate the spin Hall angle $θ_{\textrm{SH}}$, which was found to be $-0.19\pm0.04$ and is among the highest reported for a ferromagnet. Although this value is on the same order of magnitude of known heavy metals, the significantly higher resistivity of Co$_2$MnGa implies an improvement on the magnitude of detection voltages, while its ferromagnetic nature allows controlling the intensity of SHE through the magnetization direction. It was also shown that Onsager's reciprocity does not hold for this system, which is in part attributable to a different spin-dependent Hall conductivity for spin-up and spin-down carriers.

cond-mat.mtrl-sci↗

arXiv2020

Calculation of an enhanced A1g symmetry mode induced by Higgs oscillations in the Raman spectrum of high-temperature cuprate superconductors

In superconductors the Anderson-Higgs mechanism allows for the existence of a collective amplitude (Higgs) mode which can couple to eV-light mainly in a non-linear Raman-like process. The experimental non-equilibrium results on isotropic superconductors have been explained going beyond the BCS theory including the Higgs mode. Furthermore, in anisotropic d-wave superconductors strong interaction effects with other modes are expected. Here we calculate the Raman contribution of the Higgs mode from a new perspective, including many-body Higgs oscillations effects and their consequences in conventional, spontaneous Raman spectroscopy. Our results suggest a significant contribution to the intensity of the A1g symmetry Raman spectrum in d-wave superconductors. In order to test our theory, we predict the presence of measurable characteristic oscillations in THz quench-optical probe time-dependent reflectivity experiments.

cond-mat.supr-con↗

arXiv2020

Detection of Ferromagnetic Resonance from 1 nm-thick Co

To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film grown on a SiO2 substrate, the insertion of a 3 nm-thick amorphous Ta buffer layer beneath the Co enabled the detection of a salient FMR signal, which was attributed to the smooth surface of the amorphous Ta. This result implies the excitation of FMR in an ultrathin ferromagnetic film, which can pave the way to controlling magnons in ultrathin ferromagnetic films.

cond-mat.mtrl-sci↗

arXiv2020

Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.

physics.app-ph↗

arXiv2020

Sizable spin-transfer torque in Bi/Ni80Fe20 bilayer film

The search for efficient spin conversion in Bi has attracted great attention in spin-orbitronics. In the present work, we employ spin-torque ferromagnetic resonance to investigate spin conversion in Bi/Ni80Fe20(Py) bilayer films with continuously varying Bi thickness. In contrast with previous studies, sizable spin-transfer torque (i.e., a sizable spin-conversion effect) is observed in Bi/Py bilayer film. Considering the absence of spin conversion in Bi/yttrium-iron-garnet bilayers and the enhancement of spin conversion in Bi-doped Cu, the present results indicate the importance of material combinations to generate substantial spin-conversion effects in Bi.

cond-mat.mes-hall↗

arXiv2019

Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (zero-bias), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of gate voltage (+10 V), SBH shows a drastic reduction down to a value of -6.8 meV. The negative SBH reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.

physics.app-ph↗

arXiv2019

Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature

Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables reconfigurable and nonvolatile NAND or OR operation in one device. The device for the spin XOR gate consists of three iron (Fe)/cobalt (Co)/magnesium oxide (MgO) electrodes, i.e., two input and one output electrodes. Spins are injected into the Si channel from the input electrodes whose spin angular momentum corresponds to the binary input 1 or 0. The spin drift effect is controlled by a lateral electric field in the Si channel to adjust the spin accumulation voltages under two different parallel configurations, corresponding to (1, 1) and (0, 0), so that they exhibit the same value. As a result, the spin accumulation voltage detected by the output electrode exhibits three different voltages, represented by an XOR gate. The one-dimensional spin drift-diffusion model clearly explains the obtained XOR behavior. Charge current detection of the spin XOR gate is also demonstrated. The detected charge current has a maximum of 0.94 nA, the highest value in spin XOR gates reported thus far. Furthermore, gate voltage modulation of the spin XOR gate is also demonstrated, which enables operation of multiple MLG devices.

physics.app-ph↗

arXiv2018

Induced spin-orbit coupling in silicon thin films by bismuth doping

We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by doping with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi doping changes magnetoconductance from weak localization to the crossover between weak localization and weak antilocalization. The elastic diffusion length, phase coherence length and spin-orbit coupling length in Si with and without Bi implantation are estimated, and the spin-orbit coupling length after the Bi doping becomes the same order of magnitude (Lso = 54 nm) with the phase coherence length (Lϕ = 35 nm) at 2 K. This is an experimental proof that the spin-orbit coupling strength in Si thin film is tunable by doping with heavy metals.

cond-mat.mes-hall↗

arXiv2017

Plasmonic enhancement of aligned semiconducting graphene nanoribbons

We couple photoluminescent semiconducting 7-atom wide armchair edge graphene nanoribbons to plasmonic nanoantenna arrays and demonstrate an enhancement of the photoluminescence and Raman scattering intensity of the nanoribbons by more than one order of magnitude. The increase in signal allows us to study Raman spectra with high signal-to-noise ratio. Using plasmonic enhancement we are able to detect the off-resonant Raman signals from the modified radial breathing-like mode (RBLM) due to physisorbed molecules, the 3rd order RBLM, and C-H vibrations. We find excellent agreement between data and simulations describing the spectral dependence of the enhancement and modifications of the polarization anisotropy. The strong field gradients in the optical near-field further allow us to probe the subwavelength coherence properties of the phonon modes in the nanoribbons. We theoretically model this considering a finite coherence length along the GNR direction. Our results allow estimating the coherence length in graphene nanoribbons.

physics.optics↗

arXiv2017

Characterization of Spin-Transfer-Torque effect induced magnetization dynamics driven by short current pulses

We present a time-resolved study of the magnetization dynamics in a microstructured Cr$|$Heusler$|$Pt waveguide driven by the Spin-Hall-Effect and the Spin-Transfer-Torque effect via short current pulses. In particular, we focus on the determination of the threshold current at which the spin-wave damping is compensated. We have developed a novel method based on the temporal evolution of the magnon density at the beginning of an applied current pulse at which the magnon density deviates from the thermal level. Since this method does not depend on the signal-to-noise ratio, it allows for a robust and reliable determination of the threshold current which is important for the characterization of any future application based on the Spin-Transfer-Torque effect.

cond-mat.mes-hall↗

arXiv2017

Spin-singlet superconductivity in doped topological crystalline insulator Sn_{0.96}In_{0.04}Te

The In-doped topological crystalline insulator Sn_{1-x}In_xTe is a candidate for a topological superconductor, where pseudo-spin-triplet state has been proposed. To clarify the spin symmetry of Sn_{1-x}In_xTe, we perform ^{125}Te-nuclear magnetic resonance (NMR) measurements in polycrystalline samples with 0< x <0.15. The penetration depth calculated from the NMR line width is T-independent below half the superconducting transition temperature (T_c) in polycrystalline Sn_{0.96}In_{0.04}Te, which indicates a fully-opened superconducting gap. In this sample, the spin susceptibility measured by the spin Knight shift (K_s) at an external magnetic field of H_0 = 0.0872 T decreases below T_c, and K_s(T=0)/K_s(T=T_c) reaches to 0.36 \pm 0.10, which is far below the limiting value 2/3 expected for a spin-triplet state for a cubic crystal structure. Our result indicates that polycrystalline Sn_{0.96}In_{0.04}Te is a spin-singlet superconductor.

cond-mat.supr-con↗

arXiv2017

Spin-Wave versus Joule Heating in Spin-Hall-Effect/Spin-Transfer-Torque Driven Cr/Heusler/Pt Waveguides

We present a time-resolved study of the DC-current driven magnetization dynamics in a microstructured Cr/Heusler/Pt waveguide by means of Brillouin light scattering. A reduction of the effective spin-wave damping via the spin-transfer-torque effect leads to a strong increase in the magnon density. This is accompanied by a decrease of the spin-wave frequencies. By evaluating the time scales of these effects, the origin of this frequency shift can be identified. However, recently, we found that the experimental setup partially influences the decay of the spin-wave intensity after the current pulse is switched off. Thus, further investigations on the presented effect are needed to allow for a more detailed analysis. For this reason, we need to withdraw the manuscript at this point and might publish an updated version later.

cond-mat.mes-hall↗

arXiv2017

CoFeAlB alloy with low damping and low magnetization for spin transfer torque switching

We investigate the effect of Al doping on the magnetic properties of the alloy CoFeB. Comparative measurements of the saturation magnetization, the Gilbert damping parameter $α$ and the exchange constant as a function of the annealing temperature for CoFeB and CoFeAlB thin films are presented. Our results reveal a strong reduction of the magnetization for CoFeAlB in comparison to CoFeB. If the prepared CoFeAlB films are amorphous, the damping parameter $α$ is unaffected by the Al doping in comparison to the CoFeB alloy. In contrast, in the case of a crystalline CoFeAlB film, $α$ is found to be reduced. Furthermore, the x-ray characterization and the evolution of the exchange constant with the annealing temperature indicate a similar crystallization process in both alloys. The data proves the suitability of CoFeAlB for spin torque switching properties where a reduction of the switching current in comparison with CoFeB is expected.

cond-mat.mtrl-sci↗