arXiv · 1810.08321
Effective $n$-type Doping of Mg$_3$Sb$_2$ with Group-3 Elements
Abstract
The recent discovery of high thermoelectric performance in Mg$_3$Sb$_2$ has been critically enabled by the success in $n$-type doping of this material, which is achieved under Mg-rich growth conditions, typically with chalcogens (Se, Te) as extrinsic dopants. Using first-principles defect calculations, we previously predicted that higher electron concentrations ($\sim10^{20}$ cm$^{-3}$) can be achieved in Mg$_3$Sb$_2$ by doping with La instead of Se or Te. Subsequent experiments showed that free electron concentration in La-doped Mg$_3$Sb$_{2-x}$Bi$_x$ indeed exceeds those in the Te-doped material. Herein, we further investigate $n$-type doping of Mg$_3$Sb$_2$ and predict that, in addition to La, other group-3 elements (Sc, Y) are also effective as $n$-type dopants; Y is as good as La while Sc slightly less. Overall, we find that doping with any group-3 elements should lead to higher free electron concentrations than doping with chalcogens.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Prashun Gorai, Eric S. Toberer, Vladan Stevanovic. 2018-11-17. Effective $n$-type Doping of Mg$_3$Sb$_2$ with Group-3 Elements. https://doi.org/10.1063/1.5081833
Cite the original work for its findings. Save a collection to share your selection of sources.