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Eric S. Toberer

Publications and source records attributed to Eric S. Toberer.

At least 19 recordsLinked to original sources

Mapping the Configuration Space of Half-Heusler Compounds via Subspace Identification for Thermoelectric Materials Discovery

Half-Heuslers are a promising family for thermoelectric (TE) applications, yet only a small fraction of their potential chemistries has been experimentally explored. In this work, we introduce a distinct computational high-throughput screening approach designed to identify underexplored yet promising material subspaces, and apply it to half-Heusler thermoelectrics. We analyze 1,126 half-Heuslers satisfying the $``$18 valence electron rule $''$, including 332 predicted to be semiconductors, using electronic structure calculations, semi-empirical transport models, and thermoelectric quality factor $β$. Unlike conventional filtering workflows, our approach employs statistical analysis of candidate material groups to uncover trends in their collective behavior, providing robust insights and minimizing reliance on uncertain predictions for individual compounds. Our findings link $n$-type performance to ultra-high mobility at conduction band edges and $p$-type performance to high band degeneracy. Statistical correlations reveal elemental subspaces associated with high $β$. We identify two primary (Y- and Zr-containing) and two secondary (Au- and Ir-containing) subspaces that reinforce key physical design principles, making them promising candidates for further exploration. These recommendations align with previous experimental results on yttrium pnictides. Inspired by these insights, we synthesize and characterize rare-earth gold stannides (REAuSn), finding Sc$_{0.5}$Lu$_{0.5}$AuSn to exhibit low thermal conductivity (0.9-2.3 Wm$^{-1}$K$^{-1}$ at 650 K). This work demonstrates alternative strategies for high throughput screening when using approximate but unbiased models, and offers predictive tools and design strategies for optimizing half-Heusler chemistries for TE performance.

cond-mat.mtrl-sci

Continuous alloying between rocksalt and half-Heusler structures drives metal-semiconductor transition in ErNi$_x$Sb

XYZ half-Heusler phases are often described as a XZ rock salt sublattice with an interstitial Y atom. However, transport across a solid solution between rock salt and half-Heusler structures has not previously been studied. In this paper, we demonstrate the exceptional tolerance of Ni vacancies in ErNi$_x$Sb, resulting in a complete alloy in the ErSb-ErNiSb space. Thermoelectric characterization demonstrates a continuous electronic transition associated with the gradual collapse of the band gap with Ni removal. The carrier concentration increase by three orders of magnitude and Seebeck coefficient decreases from 260 uV/K to <5 uV/K. Speed of sound measurements indicate that removal of Ni softens the lattice, consistent with the breakdown of the covalent Ni-Sb sublattice. For low Ni content compositions, the combination of low speed of sound coupled with Ni vacancies strongly hamper the propagation of phonons. The ability to control the electronic and thermal transport properties across the rock salt to half-Heusler continuum opens new material design strategies across thermoelectricity, superconductivity, and non-trivial topology

cond-mat.mtrl-sci

YbV$_3$Sb$_4$ and EuV$_3$Sb$_4$, vanadium-based kagome metals with Yb$^{2+}$ and Eu$^{2+}$ zig-zag chains

Here we present YbV$_3$Sb$_4$ and EuV$_3$Sb$_4$, two new compounds exhibiting slightly distorted vanadium-based kagome nets interleaved with zig-zag chains of divalent Yb$^{2+}$ and Eu$^{2+}$ ions. Single crystal growth methods are reported alongside magnetic, electronic, and thermodynamic measurements. YbV$_3$Sb$_4$ is a nonmagnetic metal with no collective phase transitions observed between 60mK and 300K. Conversely, EuV$_3$Sb$_4$ is a magnetic kagome metal exhibiting easy-plane ferromagnetic-like order below $T_\text{C}$=32K with signatures of noncollinearity under low field. Our discovery of YbV$_3$Sb$_4$ and EuV$_3$Sb$_4$ demonstrate another direction for the discovery and development of vanadium-based kagome metals while incorporating the chemical and magnetic degrees of freedom offered by a rare-earth sublattice.

cond-mat.mtrl-sci

Leveraging Language Representation for Material Recommendation, Ranking, and Exploration

Data-driven approaches for material discovery and design have been accelerated by emerging efforts in machine learning. However, general representations of crystals to explore the vast material search space remain limited. We introduce a material discovery framework that uses natural language embeddings derived from language models as representations of compositional and structural features. The discovery framework consists of a joint scheme that first recalls relevant candidates, and next ranks the candidates based on multiple target properties. The contextual knowledge encoded in language representations conveys information about material properties and structures, enabling both representational similarity analysis for recall, and multi-task learning to share information across related properties. By applying the framework to thermoelectrics, we demonstrate diversified recommendations of prototype structures and identify under-studied high-performance material spaces. The recommended materials are corroborated by first-principles calculations and experiments, revealing novel materials with potential high performance. Our framework provides a task-agnostic means for effective material recommendation and can be applied to various material systems.

cond-mat.mtrl-sci

Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5

Materials with transition metals in triangular lattices are of great interest for their potential combination of strong correlation, exotic magnetism and electronic topology. Kagome nets are of particular importance since the discovery of geometrically frustrated magnetism and topological band structures in crystals like Herbertsmithite and Fe3Sn2, respectively. KV3Sb5 was discovered to be a layered topological metal with a Kagome net of vanadium. Here, we fabricated Josephson Junctions (JJ) of K1-xV3Sb5 and induced superconductivity over long junction lengths. Through magnetoresistance and current vs. phase measurements, we observed magnetic field sweeping direction dependent magnetoresistance, and an anisotropic interference pattern with a Fraunhofer pattern for in-plane magnetic field, but a suppression of critical current for out-of-plane magnetic field. These results indicate an anisotropic internal magnetic field in K1-xV3Sb5 which influences the superconducting coupling in the junction, possibly giving rise to spin-triplet superconductivity. In addition, the observation of long-lived fast oscillations shows evidence of spatially localized conducting channels arising from edge states. These observations pave the way for studying unconventional superconductivity and Josephson device based on Kagome metals with electron correlation and topology.

cond-mat.supr-con

Origin of ultra-low thermal conductivity in unconventional clathrates: Strong scattering from extremely low-frequency rattling modes

Recent discoveries of materials with ultra-low thermal conductivity open a pathway to significant developments in the field of thermoelectricity. Here, we conduct a comparative study of three chemically similar antimonides to establish the root causes of their extraordinarily low thermal conductivity ($0.4-0.6$ Wm$^{-1}$K$^{-1}$ at 525 K). The materials of interest are: the unconventional type-XI clathrate K$_{58}$Zn$_{122}$Sb$_{207}$, the tunnel compound K$_{6.9}$Zn$_{21}$Sb$_{16}$, and the type-I clathrate K$_8$Zn$_{15.5}$Cu$_{2.5}$Sb$_{28}$ discovered herein. Calculations of the phonon dispersions show that the type-XI compound exhibits localized (i.e., rattling) phonon modes with unusually low frequencies that span the entire acoustic regime. In contrast, rattling in the type-I clathrate is observed only at higher frequencies, and no rattling modes are present in the tunnel structure. Modeling reveals that low-frequency rattling modes profoundly limit the acoustic scattering time; the scattering time of the type-XI clathrate is half that of the type-I clathrate and a quarter of the tunnel compound. For all three materials, the thermal conductivities are additionally suppressed by soft framework bonding that lowers the acoustic group velocities, and structural complexity that leads to diffusonic character of the optical modes. Understanding details of thermal transport in structurally complex materials will be crucial for developing the next generation of thermoelectrics.

cond-mat.mtrl-sci

Hydrothermal synthesis of ordered corkite, PbFe3(PO4)(SO4)(OH)6, a S = 5/2 kagom\'e antiferromagnet

Corkite, PbFe3(PO4)(SO4)(OH)6, an understudied relative of the jarosite family of Heisenberg antiferromagnets, has been synthesized and its magnetic properties characterized for the first time. Relative to natural samples, synthetic corkite displays signatures in both infrared and Raman spectra of a more ordered arrangement of polyanion groups about the kagom\'e sublattice that retains inversion symmetry. Magnetic susceptibility measurements reveal that dried corkite undergoes a transition to a long-range, antiferromagnetically-ordered state below TN = 48 K, lower than that observed in the majority of jarosite phases, and indicative of further spin frustration. Curie-Weiss fitting of the measured magnetic susceptibility yields an effective magnetic moment of peff = 6.29(1) muB/Fe^3+ and theta_CW = -526.0(1.1) K, analogous to that observed in similar high-spin Fe^3+ systems, and indicative of strong antiferromagnetic coupling. Estimation of the change in magnetic entropy as a function of temperature from T = 0 K to T = 195 K, dS_mag = 14.86 J/mol_Fe^3+ K, is also in good agreement with the dS_mag = Rln(2S+1) = 14.9 J/mol K expected for a S = 5/2 system. In comparison to the pure jarosites, where both structure and magnetism remain largely invariant upon a variety of chemical substitutions, the replacement of one sulfate group per formula unit with a higher-valent phosphate group applies additional steric and electronic pressure on the kagom\'e lattice in corkite, further frustrating the magnetic ground state of the material. Corkite thus represents both an outlier in the known body of jarosite-type materials, and an illustration of how existing structures may be further strained in the development of highly frustrated magnetic systems.

cond-mat.str-el

Boron phosphide films by reactive sputtering: Searching for a p-type transparent conductor

With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be responsible for it. Besides, the feasibility of alternative deposition techniques has not been clarified and optical characterization is generally lacking. In this work, we demonstrate reactive sputtering of amorphous BP films, their partial crystallization in a P-containing annealing atmosphere, and extrinsic doping by C and Si. We obtain the highest hole concentration reported to date for p-type BP ($5 \times 10^{20}$ cm$^{-3}$) using C doping under B-rich conditions. We also confirm that bipolar doping is possible in BP. An anneal temperature of at least 1000 $^\circ$C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are much stronger than predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.

cond-mat.mtrl-sci

Coupled Charge and Radiation Transport Processes in Thermophotovoltaic and Thermoradiative Cells

Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge carrier dynamics in semiconductors are well-described by the Poisson-drift-diffusion equations, and thermal radiation in emitter/absorber structures can be computed using multilayer fluctuational electrodynamics. These two types of energy flows interact through radiation absorption/luminescence and charge carrier generation/recombination. However, past research has typically only assumed limited interaction, with thermal radiation absorption as an input for charge carrier models to predict device performance. To examine this assumption, we develop a fully-coupled iterative model of charge and radiation transport in semiconductor devices, and we use our model to analyze near-field and far-field GaSb thermophotovoltaic and thermoradiative systems. By comparing our results to past methods that do not consider cross-influences between charge and radiation transport, we find that a fully-coupled approach is necessary to accurately model photon recycling and near-field enhancement of external luminescence. Because these effects can substantially alter device performance, our modeling approach can aid in the design of efficient thermophotovoltaic and thermoradiative systems.

cond-mat.mes-hall

Search and Structural Featurization of Magnetically Frustrated Kagomé Lattices

We have searched nearly 40,000 inorganic solids in the Inorganic Crystal Structural Database to identify compounds containing a transition metal or rare earth kagomé sublattice, a geometrically magnetically frustrated lattice, ultimately identifying $\sim$500 materials. A broad analysis of the chemical and structural trends of these materials shows three types of kagomé sheet stacking and several classes of magnetic complexity. Following the search and classification, we rapidly screen the magnetic properties of a subset of the materials using density functional theory to eliminate those that are unlikely to exhibit magnetic frustration. From the results of our computational screening, we rediscover six materials that have previously been explored for their low temperature magnetic behavior, albeit showing symmetry breaking distortions, spin glass behavior, or magnetic ordering. However, all are materials with antiferromagnetic behavior, which we correctly predict. Finally, we also report three materials that appear to be unexplored for their magnetic properties.

cond-mat.mtrl-sci

The Efficacy of the Method of Four Coefficients to Determine Charge Carrier Scattering

The investigation of the electronic properties of semiconductors is inherently challenging due to the ensemble averaging of fundamentals to transport measurements (i.e., resistivity, Hall, and Seebeck coefficient measurements). Here, we investigate the incorporation of a fourth measurement of electronic transport, the Nernst coefficient, into the analysis, termed the method of four-coefficients. This approach yields the Fermi level, effective mass, scattering exponent, and relaxation time. We begin with a review of the underlying mathematics and investigate the mapping between the four-dimensional material property and transport coefficient spaces. We then investigate how the traditional single parabolic band method yields a single, potentially incorrect point on the solution sub-space. This uncertainty can be resolved through Nernst coefficient measurements and we map the span of the ensuing sub-space. We conclude with an investigation of how sensitive the analysis of transport coefficients is to experimental error for different sample types.

cond-mat.mtrl-sci

Ternary Nitride Materials: Fundamentals and Emerging Device Applications

Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diversity of chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N2, the number of predicted nitride compounds dwarfs those that have been synthesized, offering a breadth of opportunity for exploration. This review summarizes the fundamental properties and structural chemistry of ternary nitrides, leveraging metastability and the impact of nitrogen chemical potential. A discussion of prevalent defects, both detrimental and beneficial, is followed by a survey of synthesis techniques and their interplay with metastability. Throughout the review, we highlight applications (such as solid-state lighting, electrochemical energy storage, and electronic devices) in which ternary nitrides show particular promise.

cond-mat.mtrl-sci

Understanding Cu Incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ Structure using Resonant X-ray Diffraction

The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crystal structure and how this affects the carrier concentration. In this work, we use a combination of resonant energy X-ray diffraction (REXD) experiments and density functional theory (DFT) calculations to elucidate the nature of Cu incorporation into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ structure. REXD across the $\mathrm{Cu_k}$ edge facilitates the characterization of Cu incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy and enables direct quantification of anti-site defects. We find that Cu substitutes for Hg at a 2:1 ratio, wherein Cu annihilates a vacancy and swaps with a Hg atom. DFT calculations confirm this result and further reveal that the incorporation of Cu occurs preferentially on one of the z = 1/4 or z = 3/4 planes before filling the other plane. Furthermore, the amount of $\mathrm{Cu_{Hg}}$ anti-site defects quantified by REXD was found to be directly proportional to the experimentally measured hole concentration, indicating that the $\mathrm{Cu_{Hg}}$ defects are the driving force for tuning carrier concentration in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy. The link uncovered here between crystal structure, or more specifically anti-site defects, and carrier concentration can be extended to similar cation-disordered material systems and will aid the development of improved thermoelectric and other functional materials through defect engineering.

cond-mat.mtrl-sci

Solar Thermoradiative-Photovoltaic Energy Conversion

We propose a solar thermal energy conversion system consisting of a solar absorber, a thermoradiative cell or negative illumination photodiode, and a photovoltaic cell. Because it is a heat engine, this system can also be paired with thermal storage to provide reliable electricity generation. Heat from the solar absorber drives radiative recombination current in the thermoradiative cell, and its emitted light is absorbed by the photovoltaic cell to provide an additional photocurrent. Based on the principle of detailed balance, we calculate a limiting solar conversion efficiency of 85% for fully concentrated sunlight and 45% for one sun with an absorber and single-junction cells of equal areas. Ideal and nonideal solar thermoradiative-photovoltaic systems outperform solar thermophotovoltaic converters for low bandgaps and practical absorber temperatures. Their performance enhancement results from a high tolerance to nonradiative generation/recombination and an ability to minimize radiative heat losses. We show that a realistic device with all major losses could achieve increases in solar conversion efficiency by up to 7.9% (absolute) compared to a solar thermophotovoltaic device under low optical concentration. Our results indicate that these converters could serve as efficient heat engines for low cost single axis tracking systems.

physics.app-ph

On the Dopability of Semiconductors and Governing Material Properties

To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not dopable at all, while many others exhibit strong preference toward allowing either p- or n-type doping, but not both. In this work, we develop a model description of semiconductor dopability and formulate design principles in terms of governing materials properties. Our approach, which builds upon the semiconductor defect theory applied to a suitably devised (tight-binding) model system, reveals analytic relationships between intrinsic materials properties and the semiconductor dopability, and elucidates the role and the insufficiency of previously suggested descriptors such as the absolute band edge positions. We validate our model against a number of classic binary semiconductors and discuss its extension to more complex chemistries and the utility in large-scale material searches.

cond-mat.mtrl-sci

Anomalous, anomalous Hall effect in the layered, Kagome, Dirac semimetal KV$_3$Sb$_5$

The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE mechanisms known, and material examples are highly sought after, however in the highly conductive (skew scattering) regime the focus has centered around ferromagnetic metals. Here we report the observation of a giant extrinsic AHE in KV$_3$Sb$_5$, an exfoliable, Dirac semimetal with a Kagome layer of Vanadium atoms. Although there has been no reports of magnetic ordering down to 0.25 K, the anomalous Hall conductivity (AHC) reaches $\approx$ 15,507 $Ω^{-1}$cm$^{-1}$ with an anomalous Hall ratio (AHR) of $\approx$ 1.8$ \%$; an order of magnitude larger than Fe. Defying expectations from skew scattering theory, KV$_3$Sb$_5$ shows an enhanced skew scattering effect that scales quadratically, not linearly, with the longitudinal conductivity ($σ_{xx}$), opening the possibility of reaching an anomalous Hall angle (AHA) of 90$^{\circ}$ in metals; an effect thought reserved for quantum anomalous Hall insulators. This observation raises fundamental questions about the AHE and opens a new frontier for AHE (and correspondingly SHE) exploration, stimulating investigation in a new direction of materials, including metallic geometrically frustrated magnets, spin-liquid candidates, and cluster magnets.

cond-mat.mtrl-sci

Effective $n$-type Doping of Mg$_3$Sb$_2$ with Group-3 Elements

The recent discovery of high thermoelectric performance in Mg$_3$Sb$_2$ has been critically enabled by the success in $n$-type doping of this material, which is achieved under Mg-rich growth conditions, typically with chalcogens (Se, Te) as extrinsic dopants. Using first-principles defect calculations, we previously predicted that higher electron concentrations ($\sim10^{20}$ cm$^{-3}$) can be achieved in Mg$_3$Sb$_2$ by doping with La instead of Se or Te. Subsequent experiments showed that free electron concentration in La-doped Mg$_3$Sb$_{2-x}$Bi$_x$ indeed exceeds those in the Te-doped material. Herein, we further investigate $n$-type doping of Mg$_3$Sb$_2$ and predict that, in addition to La, other group-3 elements (Sc, Y) are also effective as $n$-type dopants; Y is as good as La while Sc slightly less. Overall, we find that doping with any group-3 elements should lead to higher free electron concentrations than doping with chalcogens.

cond-mat.mtrl-sci

Solar energy conversion properties and defect physics of ZnSiP$_2$

Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP$_2$ photovoltaic device. We show that ZnSiP$_2$ has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP$_2$ are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP$_2$ and related materials as photovoltaic absorber materials.

cond-mat.mtrl-sci